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Ray Publish 0.1.0 569670b 23d ago

KX5P02

KEXIN · MOSFETs · SOIC-8

KX5P02 from KEXIN, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all Source and should be connected together. Absolute maximum VDS is -20 V and VGS is ±10 V.
2 Source passive Source terminal of the P-channel MOSFET; connect together with pins 1 and 3. Absolute maximum VDS is -20 V and VGS is ±10 V.
3 Source passive Source terminal of the P-channel MOSFET; connect together with pins 1 and 2. Absolute maximum VDS is -20 V and VGS is ±10 V.
4 Gate input Gate terminal of the P-channel MOSFET; gate threshold VGS(th) is -0.4 V to -0.9 V and the absolute maximum VGS is ±10 V.
5 Drain passive Drain terminal of the P-channel MOSFET; pins 5 through 8 are all Drain and are connected together, with continuous drain current ID of -5 A at VGS = -10 V.
6 Drain passive Drain terminal of the P-channel MOSFET; connect together with pins 5, 7 and 8, rated continuous drain current ID of -5 A at VGS = -10 V.
7 Drain passive Drain terminal of the P-channel MOSFET; connect together with pins 5, 6 and 8, rated continuous drain current ID of -5 A at VGS = -10 V.
8 Drain passive Drain terminal of the P-channel MOSFET; connect together with pins 5, 6 and 7, rated continuous drain current ID of -5 A at VGS = -10 V.

Key specifications

Parameter Value
Manufacturer KEXIN
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V Ta = 25℃ 1
Gate-Source Voltage VGS -10 10 V Ta = 25℃ 1
Continuous Drain Current ID -5 A Ta = 25℃ 1
Power Dissipation PD 2 W Ta = 25℃ 1
Thermal Resistance, Junction-to-Ambient RthJA 62.5 ℃/W Ta = 25℃ 1
Junction Temperature TJ 150 ℃ 1
Junction Storage Temperature Range Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage VDSS -20 V ID=-250μA, VGS=0V 1
Zero Gate Voltage Drain Current IDSS -1 uA VDS=-18V, VGS=0V 1
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±10V 1
Forward Transconductance gFS 4 S VDS=-5V, ID=-5A 1
Maximum Body-Diode Continuous Current IS -1.3 A 1
Diode Forward Voltage VSD -1.1 V IS=-1.3A, VGS=0V 1
Static Drain-Source On-Resistance RDS(On) 50 mΩ VGS=-10V, ID=-5A 1
Static Drain-Source On-Resistance RDS(On) 85 mΩ VGS=-4.5V, ID=-4A 1

CAD (KiCad official)

  • Symbol: KX5P02
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: kx5p02-etched.step / kx5p02-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kx5p02.step / kx5p02.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEXIN datasheet (1 pp, sha256 18235435e2e2382b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF