component
KX5P02
Public Made by Adomby adom
KEXIN MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KX5P02
KEXIN · MOSFETs · SOIC-8
KX5P02 from KEXIN, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all Source and should be connected together. Absolute maximum VDS is -20 V and VGS is ±10 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; connect together with pins 1 and 3. Absolute maximum VDS is -20 V and VGS is ±10 V. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; connect together with pins 1 and 2. Absolute maximum VDS is -20 V and VGS is ±10 V. |
| 4 | Gate | input | Gate terminal of the P-channel MOSFET; gate threshold VGS(th) is -0.4 V to -0.9 V and the absolute maximum VGS is ±10 V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET; pins 5 through 8 are all Drain and are connected together, with continuous drain current ID of -5 A at VGS = -10 V. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET; connect together with pins 5, 7 and 8, rated continuous drain current ID of -5 A at VGS = -10 V. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET; connect together with pins 5, 6 and 8, rated continuous drain current ID of -5 A at VGS = -10 V. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET; connect together with pins 5, 6 and 7, rated continuous drain current ID of -5 A at VGS = -10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | Ta = 25℃ | 1 | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | Ta = 25℃ | 1 | |
| Continuous Drain Current | ID | -5 | A | Ta = 25℃ | 1 | ||
| Power Dissipation | PD | 2 | W | Ta = 25℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | ℃/W | Ta = 25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Junction Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | -20 | V | ID=-250μA, VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-18V, VGS=0V | 1 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±10V | 1 | |
| Forward Transconductance | gFS | 4 | S | VDS=-5V, ID=-5A | 1 | ||
| Maximum Body-Diode Continuous Current | IS | -1.3 | A | 1 | |||
| Diode Forward Voltage | VSD | -1.1 | V | IS=-1.3A, VGS=0V | 1 | ||
| Static Drain-Source On-Resistance | RDS(On) | 50 | mΩ | VGS=-10V, ID=-5A | 1 | ||
| Static Drain-Source On-Resistance | RDS(On) | 85 | mΩ | VGS=-4.5V, ID=-4A | 1 |
CAD (KiCad official)
- Symbol:
KX5P02 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
kx5p02-etched.step/kx5p02-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kx5p02.step/kx5p02.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (1 pp, sha256
18235435e2e2382b, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KX5P02
**KEXIN** · MOSFETs · SOIC-8
KX5P02 from KEXIN, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all Source and should be connected together. Absolute maximum VDS is -20 V and VGS is ±10 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; connect together with pins 1 and 3. Absolute maximum VDS is -20 V and VGS is ±10 V. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; connect together with pins 1 and 2. Absolute maximum VDS is -20 V and VGS is ±10 V. |
| 4 | Gate | input | Gate terminal of the P-channel MOSFET; gate threshold VGS(th) is -0.4 V to -0.9 V and the absolute maximum VGS is ±10 V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET; pins 5 through 8 are all Drain and are connected together, with continuous drain current ID of -5 A at VGS = -10 V. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET; connect together with pins 5, 7 and 8, rated continuous drain current ID of -5 A at VGS = -10 V. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET; connect together with pins 5, 6 and 8, rated continuous drain current ID of -5 A at VGS = -10 V. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET; connect together with pins 5, 6 and 7, rated continuous drain current ID of -5 A at VGS = -10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | | | V | Ta = 25℃ | 1 |
| Gate-Source Voltage | VGS | -10 | | 10 | V | Ta = 25℃ | 1 |
| Continuous Drain Current | ID | -5 | | | A | Ta = 25℃ | 1 |
| Power Dissipation | PD | | | 2 | W | Ta = 25℃ | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 62.5 | ℃/W | Ta = 25℃ | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Junction Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | VDSS | -20 | | | V | ID=-250μA, VGS=0V | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS=-18V, VGS=0V | 1 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±10V | 1 |
| Forward Transconductance | gFS | 4 | | | S | VDS=-5V, ID=-5A | 1 |
| Maximum Body-Diode Continuous Current | IS | | | -1.3 | A | | 1 |
| Diode Forward Voltage | VSD | | | -1.1 | V | IS=-1.3A, VGS=0V | 1 |
| Static Drain-Source On-Resistance | RDS(On) | | | 50 | mΩ | VGS=-10V, ID=-5A | 1 |
| Static Drain-Source On-Resistance | RDS(On) | | | 85 | mΩ | VGS=-4.5V, ID=-4A | 1 |
## CAD (KiCad official)
- Symbol: `KX5P02`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `kx5p02-etched.step` / `kx5p02-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kx5p02.step` / `kx5p02.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KEXIN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884816741732352) (1 pp, sha256 `18235435e2e2382b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/kx5p02-datasheet.pdf)