# KTC8550S-D-RTK

**KEC Semicon** · Bipolar (BJT) · SOT-23

KTC8550S-D-RTK from KEC Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; the datasheet rates emitter current IE at 800 mA maximum. |
| 2 | B | passive | Base of the PNP transistor; the emitter-base voltage VEBO is rated at -5 V. |
| 3 | C | passive | Collector of the PNP transistor; rated at VCBO -35 V, VCEO -30 V, collector current IC -800 mA, and collector power dissipation PC 350 mW (package mounted on 99.5% alumina). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KEC Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cut-off Current | ICBO |  |  | -50 | nA | VCB=-15V, IE=0 | 1 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -35 |  |  | V | IC=-0.5mA, IE=0 | 1 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -30 |  |  | V | IC=-1mA, IB=0 | 1 |
| DC Current Gain hFE(1) | hFE(1) | 100 |  | 300 |  | VCE=-1V, IC=-50mA | 1 |
| DC Current Gain hFE(2) | hFE(2) | 60 |  |  |  | VCE=-1V, IC=-350mA | 1 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.5 | V | IC=-500mA, IB=-50mA | 1 |
| Base-Emitter Voltage | VBE |  |  | -1.2 | V | VCE=-1V, IC=-500mA | 1 |
| Collector-Base Voltage | VCBO | -35 |  |  | V |  | 1 |
| Collector-Emitter Voltage | VCEO | -30 |  |  | V |  | 1 |
| Emitter-Base Voltage | VEBO | -5 |  |  | V |  | 1 |
| Collector Current | IC | -800 |  |  | mA |  | 1 |
| Emitter Current | IE |  |  | 800 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 350 | mW | Package mounted on 99.5% Alumina (10x8x0.6 mm) | 1 |
| Junction Temperature | Tj |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `KTC8550S-D-RTK`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ktc8550s-d-rtk-etched.step` / `ktc8550s-d-rtk-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ktc8550s-d-rtk.step` / `ktc8550s-d-rtk.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KEC Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586179952731697152) (2 pp, sha256 `b0205e52c268cfd1`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ktc8550s-d-rtk-datasheet.pdf)