component
KTA1666Y
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| kta1666y-etched.glb | 16d ago |
| kta1666y-etched.step | 16d ago |
| kta1666y-hero.glb | 16d ago |
| kta1666y-hero.overlay.json | 16d ago |
| kta1666y.glb | 16d ago |
| kta1666y.kicad_mod | 16d ago |
| kta1666y.kicad_sym | 16d ago |
| kta1666y.lbr | 16d ago |
| kta1666y.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
KTA1666Y
Changjing · Bipolar (BJT) · SOT-89-3L
KTA1666Y from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the KTA1666 PNP transistor; VBE(sat) is specified at IC=-1A and IB=-50mA with a maximum of -1.2 V. |
| 2 | COLLECTOR | passive | Collector terminal; rated for VCBO and VCEO of -50 V, IC of -2 A, and PC of 500 mW. |
| 3 | EMITTER | passive | Emitter terminal; emitter-base breakdown voltage V(BR)EBO is -5 V minimum and VEBO is rated -5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC= -1mA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -50 | V | IC=-10mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-1mA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-50V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -100 | nA | VEB=-5V,IC=0 | 1 | ||
| DC current gain, rank Y (hFE(1) range 120-240) | hFE(1) | 120 | 240 | VCE=-2V, IC=-500mA | 1 | ||
| DC current gain | hFE(2) | 40 | VCE=-2V, IC=-1.5A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-1A,IB=-50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-1A,IB=-50mA | 1 | ||
| Collector output capacitance | Cob | 40 | pF | VCB=-10V,IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 120 | MHz | VCE=-2V,IC= -500mA | 1 | ||
| Collector-base voltage | VCBO | -50 | V | 1 | |||
| Collector-emitter voltage | VCEO | -50 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -2 | A | 1 | |||
| Collector power dissipation | PC | 500 | mW | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RθJA | 250 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
KTA1666Y - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
kta1666y-etched.step/kta1666y-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kta1666y.step/kta1666y.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
848c23bb33288abd, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).