KTA1664

GME(银河微电) · Bipolar (BJT) · SOT-89

KTA1664 from GME(银河微电), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base of the PNP transistor; VEBO is limited to -5 V and base current IB to -0.16 A.
2	EMITTER	passive	Emitter of the PNP transistor; VEBO is limited to -5 V with respect to the base.
3	COLLECTOR	passive	Collector of the PNP transistor (also the center tab); VCBO is -35 V, VCEO is -30 V and continuous IC is -0.8 A.

Key specifications

Parameter	Value
Manufacturer	GME(银河微电)
Package	SOT-89
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-emitter saturation voltage	VCE(sat)			-0.7	V	IC=-500mA, IB= -20mA	2
Base-emitter voltage	VBE	-0.5		-0.8	V	VCE=-1V ,IC=-10mA	2
Collector-base breakdown voltage	V(BR)CBO	-35			V	IC=-1mA,IE=0	2
Collector-emitter breakdown voltage	V(BR)CEO	-30			V	IC=-10mA,IB=0	2
Emitter-base breakdown voltage	V(BR)EBO	-5			V	IE=-1mA,IC=0	2
Collector cut-off current	ICBO			-0.1	μA	VCB=-35V,IE=0	2
Emitter cut-off current	IEBO			-0.1	μA	VEB=-5V,IC=0	2
DC current gain	hFE	100		320		VCE=-1V,IC=-100mA	2
DC current gain	hFE	35				VCE=-1V,IC=-700mA	2
Transition frequency	fT		120		MHz	VCE=-5V, IC= -10mA	2
Collector output capacitance	Cob		19		pF	VCB=-10V,IE=0,f=1MHz	2
Collector-base voltage	VCBO			-35	V		1
Collector-emitter voltage	VCEO			-30	V		1
Emitter-base voltage	VEBO			-5	V		1
Collector current, continuous	IC			-0.8	A		1
Base current	IB			-0.16	A		1
Power dissipation	PD			500	mW		1
Junction and storage temperature	TJ, TSTG	-55		150	℃		1

CAD (KiCad official)

Symbol: KTA1664
Footprint: Package_TO_SOT_SMD:SOT-89-3
3D model: SOT-89 (KiCad packages3D, STEP)
3D model files: kta1664-etched.step / kta1664-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kta1664.step / kta1664.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: GME(银河微电) datasheet (4 pp, sha256 fe4d474b79c719ed, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# KTA1664

**GME(银河微电)** · Bipolar (BJT) · SOT-89

KTA1664 from GME(银河微电), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; VEBO is limited to -5 V and base current IB to -0.16 A. |
| 2 | EMITTER | passive | Emitter of the PNP transistor; VEBO is limited to -5 V with respect to the base. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor (also the center tab); VCBO is -35 V, VCEO is -30 V and continuous IC is -0.8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GME(银河微电) |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.7 | V | IC=-500mA, IB= -20mA | 2 |
| Base-emitter voltage | VBE | -0.5 |  | -0.8 | V | VCE=-1V ,IC=-10mA | 2 |
| Collector-base breakdown voltage | V(BR)CBO | -35 |  |  | V | IC=-1mA,IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | -30 |  |  | V | IC=-10mA,IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-1mA,IC=0 | 2 |
| Collector cut-off current | ICBO |  |  | -0.1 | μA | VCB=-35V,IE=0 | 2 |
| Emitter cut-off current | IEBO |  |  | -0.1 | μA | VEB=-5V,IC=0 | 2 |
| DC current gain | hFE | 100 |  | 320 |  | VCE=-1V,IC=-100mA | 2 |
| DC current gain | hFE | 35 |  |  |  | VCE=-1V,IC=-700mA | 2 |
| Transition frequency | fT |  | 120 |  | MHz | VCE=-5V, IC= -10mA | 2 |
| Collector output capacitance | Cob |  | 19 |  | pF | VCB=-10V,IE=0,f=1MHz | 2 |
| Collector-base voltage | VCBO |  |  | -35 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -30 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -5 | V |  | 1 |
| Collector current, continuous | IC |  |  | -0.8 | A |  | 1 |
| Base current | IB |  |  | -0.16 | A |  | 1 |
| Power dissipation | PD |  |  | 500 | mW |  | 1 |
| Junction and storage temperature | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `KTA1664`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `kta1664-etched.step` / `kta1664-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kta1664.step` / `kta1664.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GME(银河微电) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590921416009064448) (4 pp, sha256 `fe4d474b79c719ed`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kta1664-datasheet.pdf)