component
KST8550D
Public Made by Adomby adom
KEXIN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| kst8550d-etched.glb | 6d ago |
| kst8550d-etched.step | 6d ago |
| kst8550d-hero.glb | 6d ago |
| kst8550d-hero.overlay.json | 6d ago |
| kst8550d.glb | 6d ago |
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| kst8550d.kicad_sym | 6d ago |
| kst8550d.lbr | 6d ago |
| kst8550d.step | 6d ago |
| package.json | 6d ago |
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| README.md | 6d ago |
KST8550D
KEXIN · Bipolar (BJT) · SOT-23
KST8550D from KEXIN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; the datasheet rates the emitter-base voltage VEBO at -5 V and the device for collector current IC = -1.5 A. |
| 2 | Emitter | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage VEBO is rated at -5 V maximum. |
| 3 | Collector | passive | Collector terminal of the PNP transistor; the datasheet rates the collector-base voltage VCBO at -40 V and the collector-emitter voltage VCEO at -25 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -40 | V | 1 | |||
| Collector-emitter voltage | VCEO | -25 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -1.5 | A | 1 | |||
| Collector power dissipation | PC | 0.3 | W | 1 | |||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Collector-base breakdown voltage | VCBO | -40 | V | IC=-100 A, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | VCEO | -25 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE=-100 A, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -1 | A | VCB=-40V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -1 | A | VEB=-5V, IC=0 | 1 | ||
| DC current gain | hFE | 120 | 400 | VCE=-1V, IC=-100mA | 1 | ||
| DC current gain | hFE | 40 | VCE=-1V, IC=-800mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-800mA, IB=-80mA | 1 | ||
| Base-emitter on voltage | VBE(on) | -1 | V | VCE=-1V, IC=-10mA | 1 | ||
| Output capacitance | Cob | 20 | pF | VCB=-10V, IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=-10V, IC=-50mA, f=30MHz | 1 |
CAD (KiCad official)
- Symbol:
KST8550D - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
kst8550d-etched.step/kst8550d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kst8550d.step/kst8550d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (2 pp, sha256
3c116c6d7eb4e315, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).