component
KST8050S
Public Made by Adomby adom
KEXIN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| kst8050s-etched.glb | 23d ago |
| kst8050s-etched.step | 23d ago |
| kst8050s-hero.glb | 23d ago |
| kst8050s-hero.overlay.json | 23d ago |
| kst8050s.glb | 23d ago |
| kst8050s.kicad_mod | 23d ago |
| kst8050s.kicad_sym | 23d ago |
| kst8050s.lbr | 23d ago |
| kst8050s.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
KST8050S
KEXIN · Bipolar (BJT) · SOT-23
KST8050S from KEXIN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | passive | Base terminal of the KST8050S NPN transistor; the datasheet gives emitter-base breakdown VEBO of 5 V and saturation test conditions of IC = 500 mA with IB = 50 mA. |
| 2 | Emitter | passive | Emitter terminal of the KST8050S NPN transistor; the absolute maximum emitter-base voltage VEBO is 5 V. |
| 3 | Collector | passive | Collector terminal of the KST8050S NPN transistor; absolute maximums are VCBO 40 V, VCEO 25 V, continuous IC 0.5 A, and collector dissipation PC 0.3 W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base breakdown voltage | VCBO | 40 | V | IC = 100 uA, IE = 0 | 1 | ||
| Collector-Emitter breakdown voltage | VCEO | 25 | V | IC = 1 mA, IB = 0 | 1 | ||
| Emitter-Base breakdown voltage | VEBO | 5 | V | IE = 100 uA, IC = 0 | 1 | ||
| Collector-Base cut-off current | ICBO | 0.1 | A | VCB = 40 V, IE = 0 | 1 | ||
| Collector-Emitter cut-off current | ICEO | 1 | A | VCE = 20 V, IB = 0 | 1 | ||
| Emitter-Base cut-off current | IEBO | 0.1 | A | VEB = 5 V, IC = 0 | 1 | ||
| DC current gain hFE(1) at 50 mA (family range) | hFE | 120 | 400 | VCE = 1 V, IC = 50 mA | 1 | ||
| DC current gain hFE at 500 mA | hFE | 50 | VCE = 1 V, IC = 500 mA | 1 | |||
| DC current gain classification hFE(1) for KST8050S | hFE | 200 | 350 | hFE(1) classification for KST8050S (no other classification conditions printed) | 1 | ||
| Collector-Emitter saturation voltage | VCE(sat) | 0.6 | V | IC = 500 mA, IB = 50 mA | 1 | ||
| Base-Emitter saturation voltage | VBE(sat) | 1.2 | V | IC = 500 mA, IB = 50 mA | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE = 6 V, IC = 20 mA, f = 30 MHz | 1 | ||
| Collector-Base voltage | VCBO | 40 | V | 1 | |||
| Collector-Emitter voltage | VCEO | 25 | V | 1 | |||
| Emitter-Base voltage | VEBO | 5 | V | 1 | |||
| Collector current, continuous | IC | 0.5 | A | 1 | |||
| Collector dissipation | PC | 0.3 | W | 1 | |||
| Junction temperature | Tj | 150 | 1 | ||||
| Storage temperature | Tstg | -55 | 150 | 1 |
CAD (KiCad official)
- Symbol:
KST8050S - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
kst8050s-etched.step/kst8050s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kst8050s.step/kst8050s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (2 pp, sha256
cb5618b03f730e53, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).