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KST8050D

Public Made by Adom

by adom

KEXIN Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KST8050D

KEXIN · Bipolar (BJT) · SOT-23

KST8050D from KEXIN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the datasheet gives no pin-specific electrical limit, only the device absolute maximum ratings (VCBO 40 V, VCEO 25 V, VEBO 5 V, IC 1.5 A, PC 0.3 W).
2 Emitter passive Emitter terminal of the NPN transistor; the datasheet gives no pin-specific electrical limit, only the device absolute maximum ratings (VCBO 40 V, VCEO 25 V, VEBO 5 V, IC 1.5 A, PC 0.3 W).
3 Collector passive Collector terminal of the NPN transistor; the datasheet gives no pin-specific electrical limit, only the device absolute maximum ratings (VCBO 40 V, VCEO 25 V, VEBO 5 V, IC 1.5 A, PC 0.3 W).

Key specifications

Parameter Value
Manufacturer KEXIN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage (absolute maximum) VCBO 40 V 1
Collector-emitter voltage (absolute maximum) VCEO 25 V 1
Emitter-base voltage (absolute maximum) VEBO 5 V 1
Collector current - continuous (absolute maximum) IC 1.5 A 1
Collector power dissipation (absolute maximum) PC 0.3 W 1
Junction temperature (absolute maximum) Tj 150 1
Storage temperature range (absolute maximum) Tstg -55 150 1
Collector-base breakdown voltage VCBO 40 V IC = 100 uA, IE = 0 1
Collector-emitter breakdown voltage VCEO 25 V IC = 1 mA, IB = 0 1
Emitter-base breakdown voltage VEBO 5 V IE = 100 uA, IC = 0 1
Collector cut-off current ICBO 1 A VCB = 40 V, IE = 0 1
Collector-emitter cut-off current ICEO 1 A VCE = 20 V, IB = 0 1
Emitter cut-off current IEBO 1 A VEB = 5 V, IC = 0 1
DC current gain hFE 120 400 VCE = 1 V, IC = 100 mA 1
DC current gain hFE 40 VCE = 1 V, IC = 800 mA 1
Collector-emitter saturation voltage VCE(sat) 0.5 V IC = 800 mA, IB = 80 mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC = 800 mA, IB = 80 mA 1
Transition frequency fT 100 MHz VCE = 10 V, IC = 50 mA, f = 30 MHz 1

CAD (KiCad official)

  • Symbol: KST8050D
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: kst8050d-etched.step / kst8050d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kst8050d.step / kst8050d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEXIN datasheet (2 pp, sha256 30a377470973e3ea, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF