component
KSI2324DS-T1-GE3
Public Made by Adomby adom
KUU MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKSI2324DS-T1-GE3
KUU · MOSFETs · SOT-23
KSI2324DS-T1-GE3 from KUU, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGS ±8 V, and the device is specified for operation with gate drive as low as 1.8 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current IS is rated 2 A and pulsed diode current IDM is rated 15 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated 20 V and continuous drain current ID is rated 4.2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KUU |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | 4.2 | A | Ta=25℃ | 1 | ||
| Pulsed Diode Current | IDM | 15 | A | 1 | |||
| Continuous Source-Drain Current (Diode Conduction) | IS | 2 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | Ta=25℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 125 | ℃/W | t≤10s | 1 | ||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 0.4 | 1.4 | V | VDS =VGS, ID = 250µA | 2 | |
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS = ±8V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 20V, VGS =0V | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 41 | 50 | mΩ | VGS = 4.5V, ID = 4.2A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 52 | 63 | mΩ | VGS = 2.5V, ID = 3.6A | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 67 | 87 | mΩ | VGS = 1.8V, ID = 3A | 2 | |
| Diode forward voltage | VSD | 0.8 | 1 | V | IS= 1A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
KSI2324DS-T1-GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ksi2324ds-t1-ge3-etched.step/ksi2324ds-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ksi2324ds-t1-ge3.step/ksi2324ds-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KUU datasheet (5 pp, sha256
caaf4fc2402d44fb, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).