# KSI2300DS-T1-GE3

**KUU** · MOSFETs · SOT-23

KSI2300DS-T1-GE3 from KUU, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±12 V maximum, with threshold VGS(th) of 0.45 V min to 1 V max at 250 µA. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current is rated at 0.6 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 20 V and continuous drain current at 6 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KUU |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6 | A |  | 1 |
| Continuous Source-Drain Current (Diode Conduction) | IS |  |  | 0.6 | A |  | 1 |
| Operating Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  |  | 312.5 | ℃/W | t≤5s | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID =250µA | 2 |
| Gate-threshold voltage | VGS(th) | 0.45 |  | 1 | V | VDS =VGS, ID =250µA | 2 |
| Gate-body leakage | IGSS | -100 |  | 100 | nA | VDS =0V, VGS =±10V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS =16V, VGS =0V | 2 |
| Drain-source on-resistance | RDS(on) |  | 22 | 48 | mΩ | VGS =4.5V, ID = 6A | 2 |
| Drain-source on-resistance | RDS(on) |  | 28 | 55 | mΩ | VGS =2.5V, ID =4A | 2 |
| Total gate charge | Qg |  | 7.7 | 10 | nC | VDS =10V, VGS =4.5V, ID =6A | 2 |
| Diode forward voltage | VSD |  | 0.74 | 1.28 | V | IS=1A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `KSI2300DS-T1-GE3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ksi2300ds-t1-ge3-etched.step` / `ksi2300ds-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ksi2300ds-t1-ge3.step` / `ksi2300ds-t1-ge3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KUU datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588945440851443712) (5 pp, sha256 `6078341dc5f38cbf`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ksi2300ds-t1-ge3-datasheet.pdf)