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Contents

README

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KSE13003H2ASTU

onsemi · Bipolar Transistors - BJT · TO-126-3

KSE13003H2ASTU from onsemi, in a TO-126-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; VEBO max 9 V.
2 Collector passive Collector terminal of the NPN transistor; VCEO 400 V, VCBO 700 V, IC 1.5 A DC (3 A pulse) maximum.
3 Base passive Base terminal of the NPN transistor; maximum base current IB 0.75 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-126-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 700 V TC = 25°C 2
Collector-Emitter Voltage VCEO 400 V TC = 25°C 2
Emitter-Base Voltage VEBO 9 V TC = 25°C 2
Collector Current (DC) IC 1.5 A TC = 25°C 2
Collector Current (Pulse) ICP 3 A TC = 25°C 2
Base Current IB 0.75 A TC = 25°C 2
Collector Dissipation PC 20 W TC = 25°C 2
Junction Temperature TJ 150 °C 2
Storage Temperature Range TSTG -65 150 °C 2
hFE classification H2 hFE 14 21 VCE = 2V, IC = 0.5A 2
Collector-Emitter Breakdown Voltage BVCEO 400 V IC = 5mA, IB = 0 3
Emitter Cut-off Current IEBO 10 mA VEB = 9V, IC = 0 3
DC Current Gain hFE 8 40 VCE = 2V, IC = 0.5A 3
DC Current Gain hFE 5 VCE = 2V, IC = 1A 3
Collector Emitter Saturation Voltage VCE(sat) 0.5 V IC = 0.5A, IB = 0.1A 3
Collector Emitter Saturation Voltage VCE(sat) 1 V IC = 1A, IB = 0.25A 3
Collector Emitter Saturation Voltage VCE(sat) 3 V IC = 1.5A, IB = 0.5A 3
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 0.5A, IB = 0.1A 3
Base Emitter Saturation Voltage VBE(sat) 1.2 V IC = 1A, IB = 0.25A 3
Output Capacitance Cob 21 pF VCB = 10V, f = 0.1MHz 3
Current Gain Bandwidth Product fT 4 MHz VCE = 10V, IC = 0.1A 3
Turn On Time tON 1.1 ms VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = -0.2A, RL = 125W 3
Storage Time tSTG 4 ms VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = -0.2A, RL = 125W 3
Fall Time tF 0.7 ms VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = -0.2A, RL = 125W 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC IB Base Current 0.75 A PC Collector Dissipation (TC = 25°C) 20 W 2

CAD (KiCad official)

  • Symbol: KSE13003H2ASTU
  • Footprint: Package_TO_SOT_THT:TO-126-3_Vertical
  • 3D model: TO-126-3 (KiCad packages3D, STEP)
  • 3D model files: kse13003h2astu-etched.step / kse13003h2astu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kse13003h2astu.step / kse13003h2astu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 ecc51a87390b0a12, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF