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KSC5026MOS

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, TO-126. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KSC5026MOS

onsemi · Bipolar Transistors - BJT · TO-126

KSC5026MOS from onsemi, in a TO-126. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; the datasheet gives an emitter-base voltage VEBO of 7 V and an emitter-connected pin function on the TO-126 package.
2 Collector passive Collector terminal of the NPN transistor, rated for a collector-base voltage VCBO of 1100 V and a collector-emitter voltage VCEO of 800 V.
3 Base passive Base terminal of the NPN transistor, with a base current rating IB of 0.8 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-126
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 1100 V 2
Collector-Emitter Voltage VCEO 800 V 2
Emitter-Base Voltage VEBO 7 V 2
Collector Current (DC) IC 1.5 A 2
Collector Current (Pulse) ICP 5 A 2
Base Current IB 0.8 A 2
Collector Dissipation PC 20 W TC=25°C 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO 1100 V IC = 1mA, IE = 0 3
Collector-Emitter Breakdown Voltage BVCEO 800 V IC = 5mA, IB = 0 3
Emitter-Base Breakdown Voltage BVEBO 7 V IE = 1mA, IC = 0 3
Collector-Emitter Sustaining Voltage VCEX(sus) 800 V IC = 0.75A, IB1 = -IB2 = 0.15A, L = 5mH, Clamped 3
Collector Cut-off Current ICBO 10 μA VCB = 800V, IE = 0 3
Emitter Cut-off Current IEBO 10 μA VEB = 5V, IC = 0 3
DC Current Gain (hFE1) hFE1 10 40 VCE = 5V, IC = 0.1A 3
DC Current Gain (hFE2) hFE2 8 VCE = 5V, IC = 0.5A 3
Collector-Emitter Saturation Voltage VCE(sat) 2 V IC = 0.75A, IB = 0.15A 3
Base-Emitter Saturation Voltage VBE(sat) 1.5 V IC = 0.75A, IB = 0.15A 3
Output Capacitance Cob 35 pF VCB = 10V, IE = 0, f = 1MHz 3
Current Gain Bandwidth Product fT 15 MHz VCE = 10V, IC = 0.1A 3
Turn On Time tON 0.5 μs VCC = 400V, IC = 5IB1 = -2.5IB2 = 1A, RL = 400Ω 3
Storage Time tSTG 3 μs 3
Fall Time tF 0.3 μs 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC IB Base Current 0.8 A PC Collector Dissipation (TC=25°C) 20 W 2

CAD (KiCad official)

  • Symbol: KSC5026MOS
  • Footprint: Package_TO_SOT_THT:TO-126-3_Vertical
  • 3D model: TO-126 (KiCad packages3D, STEP)
  • 3D model files: ksc5026mos-etched.step / ksc5026mos-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ksc5026mos.step / ksc5026mos.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 23642c0ee67d70ce, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF