component
KSA992FTA
Public Made by Adomby adom
onsemi Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| ksa992fta-etched.glb | 17d ago |
| ksa992fta-etched.step | 17d ago |
| ksa992fta-hero.glb | 17d ago |
| ksa992fta-hero.overlay.json | 17d ago |
| ksa992fta.glb | 17d ago |
| ksa992fta.kicad_mod | 17d ago |
| ksa992fta.kicad_sym | 17d ago |
| ksa992fta.lbr | 17d ago |
| ksa992fta.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
KSA992FTA
onsemi · Bipolar (BJT) · TO-92-3
KSA992FTA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter of the PNP transistor; the emitter-base voltage is limited to −5 V (VEBO) per the maximum ratings. |
| 2 | Collector | passive | Collector of the PNP transistor; rated for a collector-base and collector-emitter voltage of −120 V and a collector current of −50 mA maximum. |
| 3 | Base | passive | Base of the PNP transistor; base current is limited to −10 mA maximum per the maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-92-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cut-Off Current | ICBO | -50 | nA | VCB = −120 V, IE = 0 | 2 | ||
| Collector Cut-Off Current | ICEO | -1 | A | VCE = −100 V, IB = 0 | 2 | ||
| Emitter Cut-Off Current | IEBO | -50 | nA | VEB = −5 V, IC = 0 | 2 | ||
| DC Current Gain | hFE1 | 150 | 500 | - | VCE = −6 V, IC = −0.1 mA | 2 | |
| DC Current Gain | hFE2 | 200 | 500 | 800 | - | VCE = −6 V, IC = −1 mA | 2 |
| DC Current Gain, class F (suffix FTA, marking F) | hFE2 | 300 | 600 | - | hFE CLASSIFICATION table, class F (test conditions as hFE2 row) | 2 | |
| Base−Emitter On Voltage | VBE(on) | -0.55 | -0.61 | -0.65 | V | VCE = −6 V, IC = −1 mA | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.09 | -0.3 | V | IC = −10 mA, IB = −1 mA | 2 | |
| Current Gain Bandwidth Product | fT | 50 | 100 | MHz | VCE = −6 V, IC = −1 mA | 2 | |
| Output Capacitance | Cob | 2 | 3 | pF | VCB = −30 V, IE = 0, f = 1 MHz | 2 | |
| Collector-Base Voltage | VCBO | -120 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -120 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -50 | mA | 1 | |||
| Base Current | IB | -10 | mA | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Power Dissipation | PD | 500 | mW | TA = 25°C, FR-4 PCB with minimum land pattern (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 250 | °C/W | FR-4 PCB with minimum land pattern (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
KSA992FTA - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
ksa992fta-etched.step/ksa992fta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ksa992fta.step/ksa992fta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
9ced52b3e94cb160, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).