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KRA110S-RTK
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KEC Semicon Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KRA110S-RTK
KEC Semicon · Digital Transistors · SOT-23
KRA110S-RTK from KEC Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the PNP transistor with built-in bias resistor; the absolute maximum emitter-base voltage VEBO is -5 V. |
| 2 | BASE | passive | Base terminal with built-in input resistor R1, which is 4.7 kΩ typical for KRA110S (range 3.29 kΩ to 6.11 kΩ). |
| 3 | COLLECTOR | passive | Collector terminal; the absolute maximum ratings are VCBO -50 V, VCEO -50 V and collector current IC -100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEC Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cut-off Current | ICBO | -100 | nA | VCB=-50V, IE=0 | 2 | ||
| Emitter Cut-off Current | IEBO | -100 | nA | VEB=-5V, IC=0 | 2 | ||
| DC Current Gain | hFE | 120 | VCE=-5V, IC=-1mA | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.1 | -0.3 | V | IC=-10mA, IB=-0.5mA | 2 | |
| Input Resistor (KRA110S) | R1 | 3.29 | 4.7 | 6.11 | k | 2 | |
| Collector-Base Voltage | VCBO | -50 | V | Ta=25 C | 1 | ||
| Collector-Emitter Voltage | VCEO | -50 | V | Ta=25 C | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | Ta=25 C | 1 | ||
| Collector Current | IC | -100 | mA | Ta=25 C | 1 | ||
| Collector Power Dissipation | PC | 200 | mW | Ta=25 C | 1 | ||
| Junction Temperature | Tj | 150 | 1 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | 1 |
CAD (KiCad official)
- Symbol:
KRA110S-RTK - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
kra110s-rtk-etched.step/kra110s-rtk-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kra110s-rtk.step/kra110s-rtk.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEC Semicon datasheet (4 pp, sha256
c677f9e63b2f02fa, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KRA110S-RTK
**KEC Semicon** · Digital Transistors · SOT-23
KRA110S-RTK from KEC Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the PNP transistor with built-in bias resistor; the absolute maximum emitter-base voltage VEBO is -5 V. |
| 2 | BASE | passive | Base terminal with built-in input resistor R1, which is 4.7 kΩ typical for KRA110S (range 3.29 kΩ to 6.11 kΩ). |
| 3 | COLLECTOR | passive | Collector terminal; the absolute maximum ratings are VCBO -50 V, VCEO -50 V and collector current IC -100 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEC Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cut-off Current | ICBO | | | -100 | nA | VCB=-50V, IE=0 | 2 |
| Emitter Cut-off Current | IEBO | | | -100 | nA | VEB=-5V, IC=0 | 2 |
| DC Current Gain | hFE | 120 | | | | VCE=-5V, IC=-1mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | -0.1 | -0.3 | V | IC=-10mA, IB=-0.5mA | 2 |
| Input Resistor (KRA110S) | R1 | 3.29 | 4.7 | 6.11 | k | | 2 |
| Collector-Base Voltage | VCBO | | | -50 | V | Ta=25 C | 1 |
| Collector-Emitter Voltage | VCEO | | | -50 | V | Ta=25 C | 1 |
| Emitter-Base Voltage | VEBO | | | -5 | V | Ta=25 C | 1 |
| Collector Current | IC | | | -100 | mA | Ta=25 C | 1 |
| Collector Power Dissipation | PC | | | 200 | mW | Ta=25 C | 1 |
| Junction Temperature | Tj | | | 150 | | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | | | 1 |
## CAD (KiCad official)
- Symbol: `KRA110S-RTK`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `kra110s-rtk-etched.step` / `kra110s-rtk-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kra110s-rtk.step` / `kra110s-rtk.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KEC Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603042402189914112) (4 pp, sha256 `c677f9e63b2f02fa`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/kra110s-rtk-datasheet.pdf)