component
KPE4403B
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKPE4403B
KIA Semicon Tech · MOSFETs · SOP-8
KPE4403B from KIA Semicon Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source breakdown voltage V(BR)DSS of -30 V and a continuous drain current of -5 A at TA=25°C. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source breakdown voltage V(BR)DSS of -30 V and a continuous drain current of -5 A at TA=25°C. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source breakdown voltage V(BR)DSS of -30 V and a continuous drain current of -5 A at TA=25°C. |
| 4 | Gate | input | Gate terminal of the P-channel MOSFET; the gate-source voltage VGS is rated at ±20 V in the absolute maximum ratings, and the datasheet specifies -5 V logic level control. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source breakdown voltage V(BR)DSS of -30 V and a continuous drain current of -5 A at TA=25°C. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source breakdown voltage V(BR)DSS of -30 V and a continuous drain current of -5 A at TA=25°C. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source breakdown voltage V(BR)DSS of -30 V and a continuous drain current of -5 A at TA=25°C. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source breakdown voltage V(BR)DSS of -30 V and a continuous drain current of -5 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | 2 | |||
| Continuous Drain Current | ID | -5 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -4.8 | A | TA=70°C | 2 | ||
| Pulse Drain Current | IDM | -24 | A | Pulse width limited by maximum allowable junction temperature | 2 | ||
| Maximum Power Dissipation | PD | 1.56 | W | TA=25°C | 2 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA=70°C | 2 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 2 | |||
| Storage Temperature Range | TSTG | -50 | 150 | °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V, TA=25°C | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -100 | uA | VDS=-24V, VGS=0V, TA=125°C | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -1.2 | -1.6 | -2.5 | V | VDS=VGS, ID=-250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 40 | 50 | mΩ | VGS=-10V, ID=-4A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 63 | 80 | mΩ | VGS=-4.5V, ID=-3A | 3 | |
| Source drain current (Body Diode) | ISD | -2 | A | TA=25°C | 3 | ||
| Forward on voltage | VSD | -0.88 | -1.2 | V | Tj=25°C, ISD=-4A, VGS=0V | 3 | |
| Input Capacitance | Ciss | 490 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 68 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 45 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Total Gate Charge | Qg | 7.9 | nC | VDS=-15V ID=-4A, VGS=-10V | 3 | ||
| Gate Source Charge | Qgs | 0.6 | nC | VDS=-15V ID=-4A, VGS=-10V | 3 | ||
| Gate Drain Charge | Qgd | 2.5 | nC | VDS=-15V ID=-4A, VGS=-10V | 3 | ||
| Turn-on Delay Time | td(on) | 7 | ns | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 3 | ||
| Turn-on Rise Time | tr | 4.5 | ns | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 3 | ||
| Turn-off Delay Time | td(off) | 23 | ns | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 3 | ||
| Turn-off Fall Time | tf | 8.4 | ns | VDD=-15V, ID=-1A, RG=3.3Ω, VGS=-10V | 3 | ||
| Thermal Resistance Junction-Ambient | RθJA | 80 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
KPE4403B - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
kpe4403b-etched.step/kpe4403b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kpe4403b.step/kpe4403b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (5 pp, sha256
d6b3a277f95134fe, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).