component
KPD7910A
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KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KPD7910A
KIA Semicon Tech · MOSFETs · TO-252
KPD7910A from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet rates the gate-source voltage VGS at ±20 V. |
| 2 | Drain | passive | MOSFET drain terminal; the datasheet rates the drain-to-source voltage VDSS at -100 V and the continuous drain current ID at -28 A (TC = 25 ºC). |
| 3 | Source | passive | MOSFET source terminal; the datasheet gives no separate rating for this pin beyond the device-level VDSS and VGS limits. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -100 | V | 2 | |||
| Continuous Drain Current | ID | -28 | A | TC=25 ºC | 2 | ||
| Continuous Drain Current | ID | -17 | A | TC=100 ºC | 2 | ||
| Pulsed Drain Current | IDP | -112 | A | TC = 25°C, tp limited by Tjmax | 2 | ||
| Avalanche Energy single pulse | EAS | 242 | mJ | L=1mH | 2 | ||
| Gate-source voltage | VGS | -20 | 20 | v | 2 | ||
| Power dissipation | PD | 102 | w | TC = 25°C | 2 | ||
| Junction & Storage Temperature Range | TJ& TSTG | -55 | 150 | ºC | 2 | ||
| Soldering temperature, wave soldering at leads | Tsold | 260 | ºC | 1.6mm from case for 10s | 2 | ||
| Thermal resistance, junction-ambient | RθJA | 62 | ºC/W | Still air box, one cubic foot (note 2) | 2 | ||
| Thermal resistance, junction-case | RθJC | 1.22 | 2 | ||||
| Drain-source breakdown voltage | BVDSS | -100 | V | VGS=0V,ID=250μA | 3 | ||
| Gate threshold voltage | VGS(th ) | -1.5 | -2 | -2.5 | V | VDS=VGS,ID=250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-100V,VGS=0V; Tj=25 ºC | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -20 | μA | VDS=-100V,VGS=0V; Tj=125 ºC | 3 | ||
| Gate leakage current | IGSS | -100 | nA | VGS=-20V,VDS=0V | 3 | ||
| Drain-source on-resistance | RDS(on) | 60 | 70 | mΩ | VGS=-10V,ID=-10A | 3 | |
| Drain-source on-resistance | RDS(on) | 70 | 90 | mΩ | VGS=-4.5V,ID=-5A | 3 | |
| Diode forward voltage | VSD | -1.5 | V | VGS=0V,ISD=-10A | 3 | ||
| Body Diode Continuous Forward Current | IS | -28 | A | TC = 25°C | 3 |
CAD (KiCad official)
- Symbol:
KPD7910A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kpd7910a-etched.step/kpd7910a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kpd7910a.step/kpd7910a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (6 pp, sha256
f129000ae3f7b491, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KPD7910A
**KIA Semicon Tech** · MOSFETs · TO-252
KPD7910A from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the datasheet rates the gate-source voltage VGS at ±20 V. |
| 2 | Drain | passive | MOSFET drain terminal; the datasheet rates the drain-to-source voltage VDSS at -100 V and the continuous drain current ID at -28 A (TC = 25 ºC). |
| 3 | Source | passive | MOSFET source terminal; the datasheet gives no separate rating for this pin beyond the device-level VDSS and VGS limits. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -100 | | | V | | 2 |
| Continuous Drain Current | ID | -28 | | | A | TC=25 ºC | 2 |
| Continuous Drain Current | ID | -17 | | | A | TC=100 ºC | 2 |
| Pulsed Drain Current | IDP | -112 | | | A | TC = 25°C, tp limited by Tjmax | 2 |
| Avalanche Energy single pulse | EAS | | | 242 | mJ | L=1mH | 2 |
| Gate-source voltage | VGS | -20 | | 20 | v | | 2 |
| Power dissipation | PD | | | 102 | w | TC = 25°C | 2 |
| Junction & Storage Temperature Range | TJ& TSTG | -55 | | 150 | ºC | | 2 |
| Soldering temperature, wave soldering at leads | Tsold | | | 260 | ºC | 1.6mm from case for 10s | 2 |
| Thermal resistance, junction-ambient | RθJA | | 62 | | ºC/W | Still air box, one cubic foot (note 2) | 2 |
| Thermal resistance, junction-case | RθJC | | 1.22 | | | | 2 |
| Drain-source breakdown voltage | BVDSS | -100 | | | V | VGS=0V,ID=250μA | 3 |
| Gate threshold voltage | VGS(th ) | -1.5 | -2 | -2.5 | V | VDS=VGS,ID=250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-100V,VGS=0V; Tj=25 ºC | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -20 | μA | VDS=-100V,VGS=0V; Tj=125 ºC | 3 |
| Gate leakage current | IGSS | | | -100 | nA | VGS=-20V,VDS=0V | 3 |
| Drain-source on-resistance | RDS(on) | | 60 | 70 | mΩ | VGS=-10V,ID=-10A | 3 |
| Drain-source on-resistance | RDS(on) | | 70 | 90 | mΩ | VGS=-4.5V,ID=-5A | 3 |
| Diode forward voltage | VSD | | | -1.5 | V | VGS=0V,ISD=-10A | 3 |
| Body Diode Continuous Forward Current | IS | | | -28 | A | TC = 25°C | 3 |
## CAD (KiCad official)
- Symbol: `KPD7910A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `kpd7910a-etched.step` / `kpd7910a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kpd7910a.step` / `kpd7910a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KIA Semicon Tech datasheet](docs/kpd7910a-datasheet.pdf) (6 pp, sha256 `f129000ae3f7b491`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/kpd7910a-datasheet.pdf)