component
KO6604
Public Made by Adomby adom
KEXIN MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KO6604
KEXIN · MOSFETs · SOT-23-6
KO6604 from KEXIN, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate1 | input | Gate terminal of channel 1 of the complementary MOSFET pair; the datasheet gives a gate-source voltage rating of ±8 V for the device. |
| 2 | Source2 | passive | Source terminal of channel 2 of the complementary MOSFET pair, with the source-to-drain rating of ±20 V set by the N- and P-channel devices (N: VDS 20 V, P: VDS -20 V). |
| 3 | Gate2 | input | Gate terminal of channel 2 of the complementary MOSFET pair; the datasheet gives a gate-source voltage rating of ±8 V for the device. |
| 4 | Drain2 | passive | Drain terminal of channel 2 of the complementary MOSFET pair; continuous drain current is rated 3.4 A (N-channel) and -2.5 A (P-channel) at Ta = 25°C. |
| 5 | Source1 | passive | Source terminal of channel 1 of the complementary MOSFET pair, with the source-to-drain rating of ±20 V set by the N- and P-channel devices (N: VDS 20 V, P: VDS -20 V). |
| 6 | Drain1 | passive | Drain terminal of channel 1 of the complementary MOSFET pair; continuous drain current is rated 3.4 A (N-channel) and -2.5 A (P-channel) at Ta = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | 20 | V | 1 | |||
| Drain-Source Voltage (P-channel) | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current (N-channel) | ID | 3.4 | A | Ta = 25℃ | 1 | ||
| Continuous Drain Current (P-channel) | ID | -2.5 | A | Ta = 25℃ | 1 | ||
| Continuous Drain Current (N-channel) | ID | 2.5 | A | Ta = 70℃ | 1 | ||
| Continuous Drain Current (P-channel) | ID | -2 | A | Ta = 70℃ | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 13 | A | 1 | |||
| Pulsed Drain Current (P-channel) | IDM | -13 | A | 1 | |||
| Power Dissipation | PD | 1.1 | W | Ta = 25℃ | 1 | ||
| Power Dissipation | PD | 0.7 | W | Ta = 70℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 150 | ℃/W | Steady-State | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 110 | ℃/W | t ≤ 10s | 1 | ||
| Thermal Resistance Junction-to-Lead | RthJL | 80 | ℃/W | Steady-State | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage (N-channel) | VDSS | 20 | V | ID=250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 5 | μA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Body Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.4 | 0.7 | 1 | V | VDS=VGS , ID=250μA | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | 51 | 65 | mΩ | VGS=4.5V, ID=3.4A | 2 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | 68 | 85 | mΩ | VGS=4.5V, ID=3.4A TJ=125℃ | 2 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | 58 | 75 | mΩ | VGS=2.5V, ID=3A | 2 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | 68 | 100 | mΩ | VGS=1.8V, ID=2A | 2 | |
| Input Capacitance (N-channel) | Ciss | 205 | 260 | 320 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Output Capacitance (N-channel) | Coss | 33 | 48 | 63 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Reverse Transfer Capacitance (N-channel) | Crss | 16 | 27 | 38 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Gate Resistance (N-channel) | Rg | 1.5 | 3 | 4.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) (N-channel) | Qg | 2.9 | 3.8 | nC | VGS=4.5V, VDS=10V, ID=3.4A | 2 | |
| Body Diode Reverse Recovery Time (N-channel) | trr | 14 | 19 | ns | IF= 3.4A, dI/dt= 100A/μs | 2 | |
| Maximum Body-Diode Continuous Current (N-channel) | IS | 1.5 | A | 2 | |||
| Diode Forward Voltage (N-channel) | VSD | 0.7 | 1 | V | IS=1A,VGS=0V | 2 | |
| Drain-Source Breakdown Voltage (P-channel) | VDSS | -20 | V | ID=-250μA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | μA | VDS=-20V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -5 | μA | VDS=-20V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Body Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -0.4 | -0.65 | -1 | V | VDS=VGS ID=-250μA | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | 56 | 75 | mΩ | VGS=-4.5V, ID=-2.5A | 3 | |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | 80 | 105 | mΩ | VGS=-4.5V, ID=-2.5A TJ=125℃ | 3 | |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | 70 | 95 | mΩ | VGS=-2.5V, ID=-2A | 3 | |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | 85 | 115 | mΩ | VGS=-1.8V, ID=-1A | 3 | |
| Input Capacitance (P-channel) | Ciss | 560 | 745 | pF | VGS=0V, VDS=-10V, f=1MHz | 3 | |
| Gate Resistance (P-channel) | Rg | 15 | 23 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 | |
| Total Gate Charge (4.5V) (P-channel) | Qg | 8.5 | 11 | nC | VGS=-4.5V, VDS=-10V, ID=-2.5A | 3 | |
| Body Diode Reverse Recovery Time (P-channel) | trr | 37 | 49 | ns | IF=-2.5A, dI/dt=100A/μs | 3 | |
| Maximum Body-Diode Continuous Current (P-channel) | IS | -1.5 | A | 3 | |||
| Diode Forward Voltage (P-channel) | VSD | -0.7 | -1 | V | IS=-1A,VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
KO6604 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
ko6604-etched.step/ko6604-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ko6604.step/ko6604.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (7 pp, sha256
7e09799a6e0c95d9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KO6604
**KEXIN** · MOSFETs · SOT-23-6
KO6604 from KEXIN, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate1 | input | Gate terminal of channel 1 of the complementary MOSFET pair; the datasheet gives a gate-source voltage rating of ±8 V for the device. |
| 2 | Source2 | passive | Source terminal of channel 2 of the complementary MOSFET pair, with the source-to-drain rating of ±20 V set by the N- and P-channel devices (N: VDS 20 V, P: VDS -20 V). |
| 3 | Gate2 | input | Gate terminal of channel 2 of the complementary MOSFET pair; the datasheet gives a gate-source voltage rating of ±8 V for the device. |
| 4 | Drain2 | passive | Drain terminal of channel 2 of the complementary MOSFET pair; continuous drain current is rated 3.4 A (N-channel) and -2.5 A (P-channel) at Ta = 25°C. |
| 5 | Source1 | passive | Source terminal of channel 1 of the complementary MOSFET pair, with the source-to-drain rating of ±20 V set by the N- and P-channel devices (N: VDS 20 V, P: VDS -20 V). |
| 6 | Drain1 | passive | Drain terminal of channel 1 of the complementary MOSFET pair; continuous drain current is rated 3.4 A (N-channel) and -2.5 A (P-channel) at Ta = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-channel) | VDS | | | 20 | V | | 1 |
| Drain-Source Voltage (P-channel) | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |
| Continuous Drain Current (N-channel) | ID | | | 3.4 | A | Ta = 25℃ | 1 |
| Continuous Drain Current (P-channel) | ID | | | -2.5 | A | Ta = 25℃ | 1 |
| Continuous Drain Current (N-channel) | ID | | | 2.5 | A | Ta = 70℃ | 1 |
| Continuous Drain Current (P-channel) | ID | | | -2 | A | Ta = 70℃ | 1 |
| Pulsed Drain Current (N-channel) | IDM | | | 13 | A | | 1 |
| Pulsed Drain Current (P-channel) | IDM | | | -13 | A | | 1 |
| Power Dissipation | PD | | | 1.1 | W | Ta = 25℃ | 1 |
| Power Dissipation | PD | | | 0.7 | W | Ta = 70℃ | 1 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 150 | ℃/W | Steady-State | 1 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 110 | ℃/W | t ≤ 10s | 1 |
| Thermal Resistance Junction-to-Lead | RthJL | | | 80 | ℃/W | Steady-State | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage (N-channel) | VDSS | 20 | | | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | μA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 5 | μA | VDS=20V, VGS=0V, TJ=55℃ | 2 |
| Gate-Body Leakage Current (N-channel) | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±8V | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 0.4 | 0.7 | 1 | V | VDS=VGS , ID=250μA | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | | 51 | 65 | mΩ | VGS=4.5V, ID=3.4A | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | | 68 | 85 | mΩ | VGS=4.5V, ID=3.4A TJ=125℃ | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | | 58 | 75 | mΩ | VGS=2.5V, ID=3A | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(On) | | 68 | 100 | mΩ | VGS=1.8V, ID=2A | 2 |
| Input Capacitance (N-channel) | Ciss | 205 | 260 | 320 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Output Capacitance (N-channel) | Coss | 33 | 48 | 63 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Reverse Transfer Capacitance (N-channel) | Crss | 16 | 27 | 38 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Gate Resistance (N-channel) | Rg | 1.5 | 3 | 4.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) (N-channel) | Qg | | 2.9 | 3.8 | nC | VGS=4.5V, VDS=10V, ID=3.4A | 2 |
| Body Diode Reverse Recovery Time (N-channel) | trr | | 14 | 19 | ns | IF= 3.4A, dI/dt= 100A/μs | 2 |
| Maximum Body-Diode Continuous Current (N-channel) | IS | | | 1.5 | A | | 2 |
| Diode Forward Voltage (N-channel) | VSD | | 0.7 | 1 | V | IS=1A,VGS=0V | 2 |
| Drain-Source Breakdown Voltage (P-channel) | VDSS | -20 | | | V | ID=-250μA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | | | -1 | μA | VDS=-20V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | | | -5 | μA | VDS=-20V, VGS=0V, TJ=55℃ | 3 |
| Gate-Body Leakage Current (P-channel) | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±8V | 3 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -0.4 | -0.65 | -1 | V | VDS=VGS ID=-250μA | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | | 56 | 75 | mΩ | VGS=-4.5V, ID=-2.5A | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | | 80 | 105 | mΩ | VGS=-4.5V, ID=-2.5A TJ=125℃ | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | | 70 | 95 | mΩ | VGS=-2.5V, ID=-2A | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(On) | | 85 | 115 | mΩ | VGS=-1.8V, ID=-1A | 3 |
| Input Capacitance (P-channel) | Ciss | | 560 | 745 | pF | VGS=0V, VDS=-10V, f=1MHz | 3 |
| Gate Resistance (P-channel) | Rg | | 15 | 23 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 |
| Total Gate Charge (4.5V) (P-channel) | Qg | | 8.5 | 11 | nC | VGS=-4.5V, VDS=-10V, ID=-2.5A | 3 |
| Body Diode Reverse Recovery Time (P-channel) | trr | | 37 | 49 | ns | IF=-2.5A, dI/dt=100A/μs | 3 |
| Maximum Body-Diode Continuous Current (P-channel) | IS | | | -1.5 | A | | 3 |
| Diode Forward Voltage (P-channel) | VSD | | -0.7 | -1 | V | IS=-1A,VGS=0V | 3 |
## CAD (KiCad official)
- Symbol: `KO6604`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `ko6604-etched.step` / `ko6604-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ko6604.step` / `ko6604.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KEXIN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904718659956736) (7 pp, sha256 `7e09799a6e0c95d9`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ko6604-datasheet.pdf)