component
KO3416
Public Made by Adomby adom
KEXIN MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KO3416
KEXIN · MOSFETs · SOT-23-3
KO3416 from KEXIN, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated ±8 V (VGS) per the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the body diode maximum continuous current IS is 2 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated 20 V with continuous drain current ID of 6.5 A at Ta=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | 6.5 | A | Ta=25°C | 1 | ||
| Continuous Drain Current | ID | 5.2 | A | Ta=70°C | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | Ta=25°C | 1 | ||
| Power Dissipation | PD | 0.9 | W | Ta=70°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 90 | °C/W | t≤10sec | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 125 | °C/W | Steady State | 1 | ||
| Thermal Resistance Junction-to-Foot | RthJF | 80 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDSS | 20 | V | ID=250uA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (Ta=70°C) | IDSS | 5 | uA | VDS=20V, VGS=0V, Ta=70°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | uA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250uA | 2 |
| On-State Drain Current | ID(on) | 30 | A | VDS=5V, VGS=4.5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 16 | 22 | mΩ | VGS=4.5V, ID=6.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(On) | 22 | 30 | mΩ | VGS=4.5V, ID=6.5A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(On) | 18 | 26 | mΩ | VGS=2.5V, ID=5.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(On) | 21 | 34 | mΩ | VGS=1.8V, ID=5A | 2 | |
| Input Capacitance | Ciss | 1295 | 1650 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Body Diode Reverse Recovery Time | trr | 31 | 41 | ns | IF=6.5A, dI/dt=100A/us | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.62 | 1 | V | IS=1.0A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
KO3416 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ko3416-etched.step/ko3416-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ko3416.step/ko3416.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (4 pp, sha256
9a5f45202b5aa4f6, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KO3416
**KEXIN** · MOSFETs · SOT-23-3
KO3416 from KEXIN, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET; gate-source voltage is rated ±8 V (VGS) per the absolute maximum ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the body diode maximum continuous current IS is 2 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated 20 V with continuous drain current ID of 6.5 A at Ta=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |
| Continuous Drain Current | ID | | | 6.5 | A | Ta=25°C | 1 |
| Continuous Drain Current | ID | | | 5.2 | A | Ta=70°C | 1 |
| Pulsed Drain Current | IDM | | | 30 | A | | 1 |
| Power Dissipation | PD | | | 1.4 | W | Ta=25°C | 1 |
| Power Dissipation | PD | | | 0.9 | W | Ta=70°C | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | °C | | 1 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 90 | °C/W | t≤10sec | 1 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 125 | °C/W | Steady State | 1 |
| Thermal Resistance Junction-to-Foot | RthJF | | | 80 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDSS | 20 | | | V | ID=250uA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (Ta=70°C) | IDSS | | | 5 | uA | VDS=20V, VGS=0V, Ta=70°C | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | uA | VDS=0V, VGS=±8V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1.1 | V | VDS=VGS, ID=250uA | 2 |
| On-State Drain Current | ID(on) | 30 | | | A | VDS=5V, VGS=4.5V | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | 16 | 22 | mΩ | VGS=4.5V, ID=6.5A | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | 22 | 30 | mΩ | VGS=4.5V, ID=6.5A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | 18 | 26 | mΩ | VGS=2.5V, ID=5.5A | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | 21 | 34 | mΩ | VGS=1.8V, ID=5A | 2 |
| Input Capacitance | Ciss | | 1295 | 1650 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Body Diode Reverse Recovery Time | trr | | 31 | 41 | ns | IF=6.5A, dI/dt=100A/us | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 2 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.62 | 1 | V | IS=1.0A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `KO3416`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `ko3416-etched.step` / `ko3416-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ko3416.step` / `ko3416.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KEXIN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904718223073280) (4 pp, sha256 `9a5f45202b5aa4f6`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ko3416-datasheet.pdf)