component
KO3404
Public Made by Adomby adom
KEXIN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| ko3404-etched.glb | 16d ago |
| ko3404-etched.step | 16d ago |
| ko3404-hero.glb | 16d ago |
| ko3404-hero.overlay.json | 16d ago |
| ko3404.glb | 16d ago |
| ko3404.kicad_mod | 16d ago |
| ko3404.kicad_sym | 16d ago |
| ko3404.lbr | 16d ago |
| ko3404.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
KO3404
KEXIN · MOSFETs · SOT-23
KO3404 from KEXIN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel enhancement MOSFET, with a gate-source voltage rating of ±20 V. |
| 2 | S | passive | Source terminal of the N-channel enhancement MOSFET, rated for a continuous drain current of 5.8 A at Ta=25°C. |
| 3 | D | passive | Drain terminal of the N-channel enhancement MOSFET, rated for a drain-source voltage of 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 30 | V | ID=250 μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=24V, VGS=0V, TJ=55 | 2 | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.9 | 3 | V | VDS=VGS, ID=250 μA | 2 |
| On state drain current | ID(ON) | 20 | A | VGS=4.5V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 22.5 | 28 | mΩ | VGS=10V, ID=5.8A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 31.3 | 38 | mΩ | VGS=10V, ID=5.8A, TJ=125 | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 34.5 | 43 | mΩ | VGS=4.5V, ID=5.0A | 2 | |
| Forward Transconductance | gFS | 10 | 14.5 | S | VDS=5V, ID=5.8A | 2 | |
| Diode Forward Voltage | VSD | 0.76 | 1 | V | IS=1A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | 2 | |||
| Input Capacitance | Ciss | 680 | 820 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate resistance | Rg | 3 | 3.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 13.88 | 17 | nC | VGS=10V, VDS=15V, ID=5.8A | 2 | |
| Total Gate Charge (4.5V) | Qg | 6.78 | 8.1 | nC | 2 | ||
| Turn-On Delay Time | tD(on) | 4.6 | 6.5 | ns | VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 | 2 | |
| Turn-On Rise Time | tr | 3.8 | 5.7 | ns | VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 | 2 | |
| Turn-Off Delay Time | tD(off) | 20.9 | 30 | ns | VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 | 2 | |
| Turn-Off Fall Time | tf | 5 | 7.5 | ns | VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 | 2 | |
| Body Diode Reverse Recovery Time | trr | 16.1 | 21 | ns | IF=5.8A, dI/dt=100A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 7.4 | 10 | nC | IF=5.8A, dI/dt=100A/μs | 2 | |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 5.8 | A | Ta=25°C | 1 | ||
| Continuous Drain Current | ID | 4.9 | A | Ta=100°C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | Ta=25°C | 1 | ||
| Power Dissipation | PD | 1 | W | Ta=70°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 90 | °C/W | t ≤ 5sec | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 125 | °C/W | Steady State | 1 | ||
| Thermal Resistance Junction-to-Lead | RthJL | 60 | °C/W | 1 | |||
| Output Capacitance | Coss | 102 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 77 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 1.8 | nC | 2 | |||
| Gate Drain Charge | Qgd | 3.12 | nC | 2 |
CAD (KiCad official)
- Symbol:
KO3404 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ko3404-etched.step/ko3404-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ko3404.step/ko3404.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (4 pp, sha256
f1c53915b3d2abb5, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).