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Ray Publish 0.1.0 3b7d53f 4h ago

KNH7650A

KIA Semicon Tech · MOSFETs · TO-3P

KNH7650A from KIA Semicon Tech, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with a gate-to-source voltage rating of ±30 V (VGSS) in the absolute maximum ratings.
2 Drain passive Drain terminal of the N-channel MOSFET, rated for a drain-to-source voltage of 500 V (VDSS) in the absolute maximum ratings.
3 Source passive Source terminal of the N-channel MOSFET, serving as the reference for the gate-to-source and drain-to-source ratings.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-3P
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 500 V TC=25 ºC unless otherwise specified 2
Gate-to-Source Voltage VGSS -30 30 V TC=25 ºC unless otherwise specified 2
Continuous Drain Current ID 25 A TC=25 ºC unless otherwise specified 2
Continuous Drain Current @ Tc=100 ºC ID 16 A Tc=100 ºC 2
Pulsed Drain Current IDM 100 A VGS=10V 2
Single Pulse Avalanche Energy EAS 1800 mJ TC=25 ºC unless otherwise specified 2
Peak Diode Recovery dv/dt dv/dt 5 TC=25 ºC unless otherwise specified 2
Power Dissipation (TO-3P) PD 290 W TC=25 ºC unless otherwise specified 2
Maximum Temperature for Soldering, Leads at 0.063in (1.6mm) from Case for 10 seconds TL 300 ºC Leads at 0.063in (1.6mm) from case for 10 seconds 2
Maximum Temperature for Soldering, Package Body for 10 seconds TPAK 260 ºC Package body for 10 seconds 2
Operating and Storage Temperature Range TJ&TSTG -55 150 ºC 2
Drain-source breakdown voltage BVDSS 500 V VGS=0V,ID=250μA 3
Drain-to-source Leakage Current IDSS 1 μA VDS=500V ,VGS=0V 3
Drain-to-source Leakage Current (high temperature) IDSS 125 μA VDS=400V,VGS=0V TC=125ºC 3
Gate-body leakage current IGSS 100 nA VGS=30V,VDS=0V 3
Gate-body leakage current (negative) IGSS -100 nA VGS=-30V,VDS=0V 3
Static drain-source on-resistance RDS(on) 170 210 mΩ VGS=10V,ID=14A 3
Gate threshold voltage VGS(th) 2 4 V VDS=VGS,ID=250μA 3
Drain-source diode forward voltage VSD 1.5 V VGS=0V,Is=18A 3
Continuous drain-source current ISD 25 A Integral pn-diode In MOSFET 3
Pulsed drain-source current ISM 100 A 3
Derating Factor above 25 ºC (TO-3P) 2.33 W/ ºC above 25 ºC 2
Thermal resistance, Junction-case (TO-3P) RθJC 0.43 ºC/W 2

CAD (KiCad official)

  • Symbol: KNH7650A
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: knh7650a-etched.step / knh7650a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); knh7650a.step / knh7650a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (8 pp, sha256 72eb6def67e849cf, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF