component
KNF7650A
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KIA Semicon Tech MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KNF7650A
KIA Semicon Tech · MOSFETs · TO-220F
KNF7650A from KIA Semicon Tech, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the gate-to-source voltage rating is ±30 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; the drain-to-source voltage rating VDSS is 500 V. |
| 3 | Source | passive | Source terminal of the MOSFET; the gate-to-source voltage rating VGSS is ±30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 500 | V | VGS=0V,ID=250μA | 3 | ||
| Drain-to-source leakage current | IDSS | 1 | μA | VDS=500V, VGS=0V | 3 | ||
| Drain-to-source leakage current at TC=125ºC | IDSS | 125 | μA | VDS=400V, VGS=0V, TC=125ºC | 3 | ||
| Gate-body leakage current (positive) | IGSS | 100 | nA | VGS=30V, VDS=0V | 3 | ||
| Gate-body leakage current (negative) | IGSS | -100 | nA | VGS=-30V, VDS=0V | 3 | ||
| Static drain-source on-resistance | RDS(on) | 170 | 210 | mΩ | VGS=10V, ID=14A | 3 | |
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 3 | |
| Drain-source diode forward voltage | VSD | 1.5 | V | VGS=0V, Is=18A | 3 | ||
| Continuous drain-source current (integral pn-diode) | ISD | 25 | A | Integral pn-diode in MOSFET | 3 | ||
| Pulsed drain-source current | ISM | 100 | A | 3 | |||
| Drain-to-source voltage | VDSS | 500 | V | TC=25 ºC unless otherwise specified | 2 | ||
| Gate-to-source voltage | VGSS | -30 | 30 | V | TC=25 ºC unless otherwise specified | 2 | |
| Continuous drain current | ID | 25 | A | TC=25 ºC | 2 | ||
| Continuous drain current | ID | 16 | A | TC=100 ºC | 2 | ||
| Pulsed drain current | IDM | 100 | A | VGS=10V | 2 | ||
| Single pulse avalanche energy | EAS | 1800 | mJ | 2 | |||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | 2 | |||
| Power dissipation (TO-220F) | PD | 105 | W | TC=25 ºC | 2 | ||
| Derating factor above 25 ºC (TO-220F) | 0.84 | W/ºC | above 25 ºC | 2 | |||
| Maximum temperature for soldering, leads | TL | 300 | ºC | Leads at 0.063in (1.6mm) from case for 10 seconds | 2 | ||
| Maximum temperature for soldering, package body | TPAK | 260 | ºC | Package body for 10 seconds | 2 | ||
| Operating and storage temperature range | TJ&TSTG | -55 | 150 | ºC | 2 | ||
| Thermal resistance, junction-ambient (TO-220F) | RθJA | 100 | ºC/W | 2 | |||
| Thermal resistance, junction-case (TO-220F) | RθJC | 1.19 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KNF7650A - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (8 pp, sha256
f42aba9f1b974cc0, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KNF7650A
**KIA Semicon Tech** · MOSFETs · TO-220F
KNF7650A from KIA Semicon Tech, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the gate-to-source voltage rating is ±30 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; the drain-to-source voltage rating VDSS is 500 V. |
| 3 | Source | passive | Source terminal of the MOSFET; the gate-to-source voltage rating VGSS is ±30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 500 | | | V | VGS=0V,ID=250μA | 3 |
| Drain-to-source leakage current | IDSS | | | 1 | μA | VDS=500V, VGS=0V | 3 |
| Drain-to-source leakage current at TC=125ºC | IDSS | | | 125 | μA | VDS=400V, VGS=0V, TC=125ºC | 3 |
| Gate-body leakage current (positive) | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 3 |
| Gate-body leakage current (negative) | IGSS | | | -100 | nA | VGS=-30V, VDS=0V | 3 |
| Static drain-source on-resistance | RDS(on) | | 170 | 210 | mΩ | VGS=10V, ID=14A | 3 |
| Gate threshold voltage | VGS(th) | 2 | | 4 | V | VDS=VGS, ID=250μA | 3 |
| Drain-source diode forward voltage | VSD | | | 1.5 | V | VGS=0V, Is=18A | 3 |
| Continuous drain-source current (integral pn-diode) | ISD | | | 25 | A | Integral pn-diode in MOSFET | 3 |
| Pulsed drain-source current | ISM | | | 100 | A | | 3 |
| Drain-to-source voltage | VDSS | | | 500 | V | TC=25 ºC unless otherwise specified | 2 |
| Gate-to-source voltage | VGSS | -30 | | 30 | V | TC=25 ºC unless otherwise specified | 2 |
| Continuous drain current | ID | | | 25 | A | TC=25 ºC | 2 |
| Continuous drain current | ID | | | 16 | A | TC=100 ºC | 2 |
| Pulsed drain current | IDM | | | 100 | A | VGS=10V | 2 |
| Single pulse avalanche energy | EAS | | | 1800 | mJ | | 2 |
| Peak diode recovery dv/dt | dv/dt | | | 5 | V/ns | | 2 |
| Power dissipation (TO-220F) | PD | | | 105 | W | TC=25 ºC | 2 |
| Derating factor above 25 ºC (TO-220F) | | | | 0.84 | W/ºC | above 25 ºC | 2 |
| Maximum temperature for soldering, leads | TL | | | 300 | ºC | Leads at 0.063in (1.6mm) from case for 10 seconds | 2 |
| Maximum temperature for soldering, package body | TPAK | | | 260 | ºC | Package body for 10 seconds | 2 |
| Operating and storage temperature range | TJ&TSTG | -55 | | 150 | ºC | | 2 |
| Thermal resistance, junction-ambient (TO-220F) | RθJA | | 100 | | ºC/W | | 2 |
| Thermal resistance, junction-case (TO-220F) | RθJC | | 1.19 | | ºC/W | | 2 |
## CAD (KiCad official)
- Symbol: `KNF7650A`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KIA Semicon Tech datasheet](docs/knf7650a-datasheet.pdf) (8 pp, sha256 `f42aba9f1b974cc0`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/knf7650a-datasheet.pdf)