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KNE6303A

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KIA Semicon Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KNE6303A

KIA Semicon Tech · MOSFETs · SOP-8

KNE6303A from KIA Semicon Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are all Source.
2 Source passive Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are all Source.
3 Source passive Source terminal of the N-channel MOSFET, pins 1, 2 and 3 are all Source.
4 Gate input Gate terminal of the N-channel MOSFET with a maximum gate-source voltage of ±20V.
5 Drain passive Drain terminal of the N-channel MOSFET (30V VDS, 12A continuous), pins 5 to 8 are all Drain.
6 Drain passive Drain terminal of the N-channel MOSFET (30V VDS, 12A continuous), pins 5 to 8 are all Drain.
7 Drain passive Drain terminal of the N-channel MOSFET (30V VDS, 12A continuous), pins 5 to 8 are all Drain.
8 Drain passive Drain terminal of the N-channel MOSFET (30V VDS, 12A continuous), pins 5 to 8 are all Drain.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 30 V VGS=0V,ID=250μA 3
Drain-source on-state resistance RDS(ON) 11.5 14 mΩ VGS=4.5V,ID=6A 3
Drain-source on-state resistance RDS(ON) 8 10 mΩ VGS=10V,ID=12A 3
Gate threshold voltage VGS(th) 1 1.8 3 V VDS=VGS,ID=-250μA 3
Zero gate voltage drain current IDSS 1 μA VDS=25V,VGS=0V 3
Gate-source forward leakage IGSS 100 nA VGS=+20V,VDS=0V 3
Diode forward voltage VSD 0.87 1.5 V IS=10A,VGS=0V 3
Max. diode forward current IS 12 A 3
Drain-source voltage VDS 30 V Ta=25°C 2
Gate-source voltage VGS 20 V Ta=25°C 2
Continuous drain current ID 12 A Ta=25°C 2
Pulsed drain current IDM 48 A Ta=25°C 2
Maximum power dissipation PD 3.1 W TA=25°C 2
Maximum power dissipation PD 2 W TA=75°C 2
Operating junction and storage temperature range TJ/TSTG -55 150 °C 2
Junction-to-case thermal resistance RθJC 40.3 °C/W 2
Junction-to-ambient thermal resistance (PCB mount) RθJA 59 °C/W PCB mount 2
Forward transconductance Gfs 12 S VDS=15V,ID=6A 3
Total gate charge Qg 10 nC ID=35A, VDS=15V, VGS=10V 3
Gate-source charge Qgs 3.5 nC ID=35A, VDS=15V, VGS=10V 3
Gate-drain (Miller) charge Qgd 3 nC ID=35A, VDS=15V, VGS=10V 3
Turn-on delay time td(on) 12 ns VDD=15V, ID=1A, RG=6Ω, RL=15Ω, VGEN=10V 3
Rise time tr 4 ns VDD=15V, ID=1A, RG=6Ω, RL=15Ω, VGEN=10V 3
Turn-off delay time td(off) 32 ns VDD=15V, ID=1A, RG=6Ω, RL=15Ω, VGEN=10V 3
Fall time tf 6 ns VDD=15V, ID=1A, RG=6Ω, RL=15Ω, VGEN=10V 3
Input capacitance Ciss 1300 pF VGS=0V, VDS=15V, f=1.0MHz 3
Output capacitance Coss 270 pF VGS=0V, VDS=15V, f=1.0MHz 3
Reverse transfer capacitance Crss 145 pF VGS=0V, VDS=15V, f=1.0MHz 3

CAD (KiCad official)

  • Symbol: KNE6303A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: kne6303a-etched.step / kne6303a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kne6303a.step / kne6303a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (5 pp, sha256 a734f9a1dc3515f9, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF