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KND8606B

Public Made by Adom

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KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorknd8606bfactory-2.0.0extractor-text

Verified KND8606B

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: KND8606B · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-zauvmet9/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ knd8606b.kicad_sym✓ knd8606b.kicad_mod✓ knd8606b.step
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Ray Publish 0.1.0 caaee37 7d ago

KND8606B

KIA Semicon Tech · MOSFETs · TO-252

KND8606B from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and threshold voltage of 1 V to 2.5 V.
2 Drain passive Drain terminal, rated for 60 V drain-source voltage and 35 A continuous drain current at TC=25°C.
3 Source passive Source terminal of the MOSFET, carrying up to 35 A continuous current at TC=25°C.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V TC=25℃ 2
Drain Current ID 35 A TC=25°C 2
Drain Current ID 22 A TC=100°C 2
Drain Current Pulsed IDM 80 A Note 1 2
Gate-Source Voltage VGSS -20 20 V ±20 V 2
Single Pulsed Avalanche Energy EAS 450 mJ Note 2 2
Avalanche Current IAR 35 A Note 1 2
Repetitive Avalanche Energy EAR 12 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 2
Power Dissipation PD 60 W TC=25°C 2
Power Dissipation Derating PD 0.8 W/°C Derate above 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 175 °C 2
Maximum lead temperature for soldering TL 300 °C 1/8" from case for 5 seconds 2
Thermal Resistance, Junction-to-Case RθJC 2.5 °C/W 2
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V,ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V,VGS=0V 3
Zero Gate Voltage Drain Current IDSS 10 uA VDS=48V,TC=150℃ 3
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS=20V,VDS=0V 3
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS=-20V,VDS=0V 3
Gate Threshold Voltage VGS(th) 1 1.8 2.5 V VDS=VGS,ID=250uA 3
Static Drain-Source On-Resistance RDS(on) 15 20 mΩ VGS=10V,ID=20A 3
Maximum Continuous Drain-Source Diode Forward Current IS 35 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 80 A 3
Drain-Source Diode Forward Voltage VSD 1.4 V VGS=0V, IS=35A 3
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.06 V/℃ ID=250uA, Referenced to 25°C 3
Forward Transconductance gFS 22 S VDS=25V,ID=25A (Note 4) 3
Input Capacitance Ciss 2800 pF VDS=25V,VGS=0V, f=1.0MHz 3
Output Capacitance Coss 200 pF VDS=25V,VGS=0V, f=1.0MHz 3
Reverse Transfer Capacitance Crss 100 pF VDS=25V,VGS=0V, f=1.0MHz 3
Turn-On Delay Time td(on) 15 ns VDD=30V,ID=25A, RG=25Ω (Note 4,5) 3
Turn-On Rise Time tr 105 ns VDD=30V,ID=25A, RG=25Ω (Note 4,5) 3
Turn-Off Delay Time td(off) 60 ns VDD=30V,ID=25A, RG=25Ω (Note 4,5) 3
Turn-Off Fall Time tf 65 ns VDD=30V,ID=25A, RG=25Ω (Note 4,5) 3
Total Gate Charge Qg 33 nC VDS=48V,ID=25A, VGS=10V (Note 4,5) 3
Gate-Source Charge Qgs 8.5 nC VDS=48V,ID=25A, VGS=10V (Note 4,5) 3
Gate-Drain Charge Qgd 14 nC VDS=48V,ID=25A, VGS=10V (Note 4,5) 3
Reverse Recovery Time trr 60 ns VGS=0V,IS=35A, dIF/dt=100A/us (Note 4) 3
Reverse Recovery Charge Qrr 80 nC VGS=0V,IS=35A, dIF/dt=100A/us (Note 4) 3

CAD (KiCad official)

  • Symbol: KND8606B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: knd8606b-etched.step / knd8606b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); knd8606b.step / knd8606b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (7 pp, sha256 cf43a4d3e6c07af5, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF