component
KND3404C
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKND3404C
KIA Semicon Tech · MOSFETs · TO-252
KND3404C from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the datasheet's absolute maximum gate-source voltage VGS is +20 V. |
| 2 | Drain | passive | Drain of the N-channel MOSFET; the absolute maximum drain-source voltage VDS is 40 V and the continuous drain current is 80 A at TC=25ºC. |
| 3 | Source | passive | Source of the N-channel MOSFET; the continuous source current IS is rated at 80 A and the pulsed source current ISM at 150 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 40 | V | 2 | |||
| Gate-source voltage | VGS | 20 | V | 2 | |||
| Continuous drain current | ID | 80 | A | VGS@10V, TC=25ºC | 2 | ||
| Continuous drain current | ID | 58 | A | VGS@10V, TC=100ºC | 2 | ||
| Pulsed drain current | IDM | 150 | A | 2 | |||
| Single pulse avalanche energy | EAS | 110 | mJ | 2 | |||
| Avalanche current | IAS | 47 | A | 2 | |||
| Total power dissipation | PD | 52.1 | W | Tc=25ºC | 2 | ||
| Junction and storage temperature range | TJ, TSTG | -55 | 150 | ºC | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA | 3 | ||
| Static Drain-Source On-Resistance (TO-252) | RDS(ON) | 5 | 6.5 | mΩ | TO-252 VGS=10V, ID=15A | 3 | |
| Static Drain-Source On-Resistance (TO-252) | RDS(ON) | 6.5 | 9 | mΩ | TO-252 VGS=4.5V, ID=12A | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250uA | 3 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V, VGS=0V, TJ=25°C | 3 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=32V, VGS=0V, TJ=55°C | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Continuous Source Current | IS | 80 | A | VG=VD=0V, Force Current | 3 | ||
| Pulsed Source Current | ISM | 150 | A | 3 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 3 | ||
| Thermal resistance, junction-ambient | RthJA | 62 | ºC/W | 2 | |||
| Thermal resistance, junction-case | RthJC | 2.4 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KND3404C - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
knd3404c-etched.step/knd3404c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);knd3404c.step/knd3404c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (5 pp, sha256
600b028a5ba784b5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).