component
KND3403B
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownKND3403B
KIA Semicon Tech · MOSFETs · TO-252
KND3403B from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; absolute maximum gate-source voltage VGSS is ±20 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; rated VDSS 30 V and continuous drain current 85 A at TC = 25 ºC. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet rates continuous source current IS at 85 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0 V, ID = 250 uA | 3 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS = 30 V, VGS = 0 V | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0 V | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.3 | 2.5 | V | VDS = VGS, ID = 250 uA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 4.5 | 5.5 | mΩ | VGS = 10 V, ID = 20 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 5.5 | 7.2 | mΩ | VGS = 4.5V, ID = 15 A | 3 | |
| Continuous Source Current | IS | 85 | A | Integral Reverse P-N Junction Diode in the MOSFET | 3 | ||
| Pulsed Source Current | ISM | 340 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS =20 A | 3 | ||
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Drain Current -Continuous | ID | 85 | A | TC = 25 ºC | 2 | ||
| Drain Current -Continuous | ID | 61 | A | TC = 100 ºC | 2 | ||
| Drain Current -Pulsed | IDM | 340 | A | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 156 | mJ | Note 1: L = 0.5mH, VDD = 15V, VGS = 10V, RG = 25Ω, Starting TJ = 25°C | 2 | ||
| Power Dissipation | PD | 71 | W | TC = 25 ºC | 2 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | ºC | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.1 | ºC /W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | ºC /W | 2 |
CAD (KiCad official)
- Symbol:
KND3403B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
knd3403b-etched.step/knd3403b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);knd3403b.step/knd3403b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (5 pp, sha256
d5a088041d4eb9db, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).