component

KND3308A

Public Made by Adom

by adom

KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsknd3308afactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
knd3308a / README.md
History Download
Ray Publish 0.1.0 5b97521 8d ago

KND3308A

KIA Semicon Tech · MOSFETs · TO-252

KND3308A from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the datasheet rates gate-source voltage VGSS at +25 V.
2 Drain passive Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 80 V.
3 Source passive Source terminal of the N-channel MOSFET; the body diode continuous forward current is rated at 80 A.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 80 V 2
Gate-source voltage VGSS 25 V 2
Continuous drain current (TC=25 ºC, TO-252) ID 80 A TC=25 ºC; drain current limited by maximum junction temperature 2
Continuous drain current (TC=100 ºC, TO-252) ID 70 A TC=100 ºC; drain current limited by maximum junction temperature 2
Pulse drain current IDP 340 A TC=25 ºC 2
Avalanche current IAS 20 A 2
Avalanche energy EAS 410 mJ 2
Maximum power dissipation (TC=25 ºC, TO-252) PD 120 W TC=25 ºC 2
Maximum power dissipation (TC=100 ºC, TO-252) PD 60 W TC=100 ºC 2
Junction & storage temperature range TJ,TSTG -55 175 ºC 2
Drain-source breakdown voltage BVDSS 80 V VGS=0V,IDS=250μA 3
Zero gate voltage drain current (25 ºC) IDSS 1 μA VDS=64V,VGS=0V 3
Zero gate voltage drain current (TJ=125 ºC) IDSS 100 μA TJ=125 ºC 3
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, IDS=250μA 3
Gate leakage current IGSS 100 nA VGS=+25V,VDS=0V 3
Drain-source on-state resistance RDS(on)1 6.2 9 mΩ VGS=10V,IDS=30A 3
Diode forward voltage VSD1 1.3 V ISD=40A,VGS=0V 3
Diode continuous forward current IS 80 A 3
Thermal resistance-junction to case (TO-252) Rθjc 1.04 ºC/W 2
Thermal resistance-junction to ambient Rθja 55 ºC/W 2
Reverse recovery time trr 25 nS IF=40A,dl/dt=100A/μs 3
Reverse recovery charge Qrr 18.5 nC 3
Gate resistance RG 1.3 Ω VGS=0V, VDS=0V,F=1MHz 3
Input capacitance Ciss 3110 pF VGS=0V, VDS=25V, F=1.0MHz 3
Output capacitance Coss 445 pF 3
Reverse transfer capacitance Crss 270 pF 3
Turn-on delay time td(ON) 20.4 nS VDD=37.5V,ID=40A,VGS=10V,RG=6.8Ω 3
Turn-on rise time tr 63 nS 3
Turn-off delay time td(OFF) 67 nS 3
Turn-off fall time tf 43 nS 3
Total gate charge Qg 76 nC VDS=37.5V, VGS=10V, ID=40A 3
Gate-source charge Qgs 9.5 nC 3
Gate-drain charge Qgd 40 nC 3

CAD (KiCad official)

  • Symbol: KND3308A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: knd3308a-etched.step / knd3308a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); knd3308a.step / knd3308a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (7 pp, sha256 dc1307993c0a69ac, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF