component

KNC2404A

Public Made by Adom

by adom

KIA Semicon Tech MOSFETs, TO-263-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsknc2404afactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
knc2404a / README.md
History Download
Ray Publish 0.1.0 d5049d5 17d ago

KNC2404A

KIA Semicon Tech · MOSFETs · TO-263-6L

KNC2404A from KIA Semicon Tech, in a TO-263-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-to-source voltage is limited to ±25 V (VGSS) and the gate threshold is 2 V min to 4 V max at 250 µA.
2 Source passive Source terminal, connected to the other source pins; continuous drain current is 190 A silicon limited and 120 A package limited at TC=25°C.
3 Source passive Source terminal, connected to the other source pins; body diode continuous forward current is 190 A.
4 Drain passive Drain, brought out as the exposed tab (pin 4 is the tab in the package drawing, with the middle lead absent); drain-to-source voltage is 40 V max (VDSS).
5 Source passive Source terminal, connected to the other source pins; pulsed drain current is 480 A at TC=25°C.
6 Source passive Source terminal, connected to the other source pins; RDS(on) is 2.2 mΩ typ and 3.5 mΩ max at VGS=10 V, IDS=30 A.
7 Source passive Source terminal, connected to the other source pins; junction and storage temperature range is -55 to 150 °C.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-263-6L
Category Transistors/Thyristors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-source voltage VDSS 40 V 2
Gate-to-source voltage VGSS 25 V 2
Continuous drain current ID 190 A TC=25ºC(Silicon limited) 2
Continuous drain current ID 120 A TC=25°C(Package limited) 2
Continuous drain current ID 109 A TC=100°C (Silicon limited) 2
Pulsed drain current IDP 480 A TC=25 ºC 2
Avalanche current IAS 46 A L=0.5mH 2
Avalanche energy EAS 529 mJ L=0.5mH 2
Maximum power dissipation PD 123 W TC=25 ºC 2
Maximum power dissipation PD 82 W TC=100 ºC 2
Junction & storage temperature range TJ,TSTG -55 150 ºC 2
Thermal resistance-junction to case Rθjc 1.02 ºC/W 2
Thermal resistance-junction to ambient Rθja 80 ºC/W 2
Drain-source breakdown voltage BVDSS 40 V VGS=0V,IDS=250μA 3
Zero gate voltage drain current IDSS 1 μA VDS=64V,VGS=0V 3
Gate threshold voltage VGS(th) 2 4 V VDS=VGS, IDS=250μA 3
Gate leakage current IGSS 100 nA VGS=+25V,VDS=0V 3
Drain-source on-state resistance RDS(on) 2.2 3.5 mΩ VGS=10V,IDS=30A 3
Diode forward voltage VSD 0.9 1.3 V ISD=40A,VGS=0V 3
Diode continuous forward current IS 190 A 3

CAD (KiCad official)

  • Symbol: KNC2404A
  • Footprint: Package_TO_SOT_SMD:TO-263-6
  • 3D model: TO-263-6L (KiCad packages3D, STEP)
  • 3D model files: knc2404a-etched.step / knc2404a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); knc2404a.step / knc2404a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (6 pp, sha256 1b2bfb095dadb449, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF