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KN3904S-RTK

Public Made by Adom

by adom

KEC Semicon Bipolar Transistors - BJT, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KN3904S-RTK

KEC Semicon · Bipolar Transistors - BJT · SOT-23-3

KN3904S-RTK from KEC Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter lead of the NPN transistor, with absolute maximum emitter-base voltage VEBO of 6 V.
2 BASE passive Base lead of the NPN transistor, with absolute maximum base current IB of 50 mA.
3 COLLECTOR passive Collector lead of the NPN transistor, with absolute maximum collector-emitter voltage VCEO of 40 V and collector current IC of 200 mA.

Key specifications

Parameter Value
Manufacturer KEC Semicon
Package SOT-23-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 60 V 1
Collector-Emitter Voltage VCEO 40 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current IC 200 mA 1
Base Current IB 50 mA 1
Collector Power Dissipation PC 350 mW Package mounted on 99.5% alumina 10x8x0.6 1
Junction Temperature Tj 150 1
Storage Temperature Range Tstg -55 150 1
Collector Cut-off Current ICEX 50 nA VCE=30V, VEB=3V 2
Collector-Base Breakdown Voltage V(BR)CBO 60 V IC=10μA, IE=0 2
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10μA, IC=0 2
DC Current Gain hFE(1) 40 VCE=1V, IC=0.1mA 2
DC Current Gain hFE(2) 70 VCE=1V, IC=1mA 2
DC Current Gain hFE(3) 100 300 VCE=1V, IC=10mA 2
DC Current Gain hFE(4) 60 VCE=1V, IC=50mA 2
DC Current Gain hFE(5) 30 VCE=1V, IC=100mA 2
Collector-Emitter Saturation Voltage VCE(sat)1 0.2 V IC=10mA, IB=1mA 2
Collector-Emitter Saturation Voltage VCE(sat)2 0.3 V IC=50mA, IB=5mA 2
Base-Emitter Saturation Voltage VBE(sat)1 0.65 0.85 V IC=10mA, IB=1mA 2
Base-Emitter Saturation Voltage VBE(sat)2 0.95 V IC=50mA, IB=5mA 2
Collector Output Capacitance Cob 4 pF VCB=5V, IE=0, f=1MHz 2
Transition Frequency fT 300 MHz VCE=20V, IC=10mA, f=100MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Base Current IB 50 mA Collector Power Dissipation PC * 350 mW 1

CAD (KiCad official)

  • Symbol: KN3904S-RTK
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: kn3904s-rtk-etched.step / kn3904s-rtk-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kn3904s-rtk.step / kn3904s-rtk.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEC Semicon datasheet (3 pp, sha256 65737e2508e036d1, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF