component
KIRFR9024NTRTBF
Public Made by Adomby adom
KUU MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KIRFR9024NTRTBF
KUU · MOSFETs · TO-252
KIRFR9024NTRTBF from KUU, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; gate-source voltage VGS is limited to ±20 V per the maximum ratings. |
| 2 | DRAIN | passive | Drain terminal of the P-channel MOSFET; drain-source voltage VDS is rated -60 V and continuous drain current ID is -8.8 A. |
| 3 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is -8.8 A and pulsed diode current ISM is -35 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KUU |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -8.8 | A | 2 | |||
| Pulsed Diode Curren | IDM | -35 | A | 2 | |||
| Power Dissipation | PD | 50 | W | 2 | |||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | 2 | |||
| Repetitive Avalanche Current | IAR | -8.8 | A | 2 | |||
| Repetitive Avalanche Energy | EAR | 5 | mJ | 2 | |||
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | V/ns | 2 | |||
| Operating Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature | TSTG | -55 | 155 | ℃ | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = - 250µA | 3 | ||
| Gate-source threshold voltage | VGS(th) | -2 | -4 | V | VDS =VGS, ID = -250µA | 3 | |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS = ±20V | 3 | |
| Zero gate voltage drain current | IDSS | -100 | µA | VDS = -60V, VGS =0V | 3 | ||
| Drain-source on-state resistance | RDS(on) | 75 | 200 | mΩ | VGS = -10V, ID = -5.3A | 3 | |
| Forward transconductance | gfs | 2.9 | S | VDS = -25V, ID = -5.3A | 3 | ||
| Diode forward voltage | VSD | -1.8 | V | IS= -7.2A, VGS=0V | 3 | ||
| Reverse Recovery Time | trr | 100 | 200 | ns | IF= -11A, dl/dt=100A/s | 3 | |
| Reverse Recovery Charge | Qrr | 0.32 | 0.64 | µC | IF= -11A, dl/dt=100A/s | 3 | |
| Continuous Source-Drain Diode Current | IS | -8.8 | A | 3 | |||
| Pulsed Diode Forward Current | ISM | -35 | A | 3 | |||
| Thermal resistance from junction to ambient | RθJA | 45 | ℃/W | t≤10s | 2 | ||
| Maximum Junction-to-Ambient | RthJA | 110 | ℃/W | 2 | |||
| Linear Derating Factor | 0.33 | W/°C | 2 | ||||
| Linear Derating Factor (PCB Mount) | 0.02 | W/°C | 2 |
CAD (KiCad official)
- Symbol:
KIRFR9024NTRTBF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kirfr9024ntrtbf-etched.step/kirfr9024ntrtbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kirfr9024ntrtbf.step/kirfr9024ntrtbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KUU datasheet (9 pp, sha256
53545cfa8ad9689d, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KIRFR9024NTRTBF
**KUU** · MOSFETs · TO-252
KIRFR9024NTRTBF from KUU, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; gate-source voltage VGS is limited to ±20 V per the maximum ratings. |
| 2 | DRAIN | passive | Drain terminal of the P-channel MOSFET; drain-source voltage VDS is rated -60 V and continuous drain current ID is -8.8 A. |
| 3 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous source-drain diode current IS is -8.8 A and pulsed diode current ISM is -35 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KUU |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | | 2 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Continuous Drain Current | ID | -8.8 | | | A | | 2 |
| Pulsed Diode Curren | IDM | -35 | | | A | | 2 |
| Power Dissipation | PD | | | 50 | W | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 300 | mJ | | 2 |
| Repetitive Avalanche Current | IAR | -8.8 | | | A | | 2 |
| Repetitive Avalanche Energy | EAR | | | 5 | mJ | | 2 |
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | | | V/ns | | 2 |
| Operating Junction Temperature | TJ | | | 150 | ℃ | | 2 |
| Storage Temperature | TSTG | -55 | | 155 | ℃ | | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -60 | | | V | VGS = 0V, ID = - 250µA | 3 |
| Gate-source threshold voltage | VGS(th) | -2 | | -4 | V | VDS =VGS, ID = -250µA | 3 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS =0V, VGS = ±20V | 3 |
| Zero gate voltage drain current | IDSS | | | -100 | µA | VDS = -60V, VGS =0V | 3 |
| Drain-source on-state resistance | RDS(on) | | 75 | 200 | mΩ | VGS = -10V, ID = -5.3A | 3 |
| Forward transconductance | gfs | 2.9 | | | S | VDS = -25V, ID = -5.3A | 3 |
| Diode forward voltage | VSD | | | -1.8 | V | IS= -7.2A, VGS=0V | 3 |
| Reverse Recovery Time | trr | | 100 | 200 | ns | IF= -11A, dl/dt=100A/s | 3 |
| Reverse Recovery Charge | Qrr | | 0.32 | 0.64 | µC | IF= -11A, dl/dt=100A/s | 3 |
| Continuous Source-Drain Diode Current | IS | | | -8.8 | A | | 3 |
| Pulsed Diode Forward Current | ISM | | | -35 | A | | 3 |
| Thermal resistance from junction to ambient | RθJA | | 45 | | ℃/W | t≤10s | 2 |
| Maximum Junction-to-Ambient | RthJA | | 110 | | ℃/W | | 2 |
| Linear Derating Factor | | | 0.33 | | W/°C | | 2 |
| Linear Derating Factor (PCB Mount) | | | 0.02 | | W/°C | | 2 |
## CAD (KiCad official)
- Symbol: `KIRFR9024NTRTBF`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `kirfr9024ntrtbf-etched.step` / `kirfr9024ntrtbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kirfr9024ntrtbf.step` / `kirfr9024ntrtbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KUU datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954879017046016) (9 pp, sha256 `53545cfa8ad9689d`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/kirfr9024ntrtbf-datasheet.pdf)