component
KIA50N03BD
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKIA50N03BD
KIA Semicon Tech · MOSFETs · TO-252
KIA50N03BD from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate terminal; the gate-source voltage is rated at ±20 V (VGSS). |
| 2 | Drain | passive | MOSFET drain terminal; rated for 30 V drain-source voltage (VDSS) and 50 A continuous drain current at TC = 25 ºC. |
| 3 | Source | passive | MOSFET source terminal; the integral reverse P-N body diode is rated for 50 A continuous source current (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Drain Current -Continuous | ID | 50 | A | TC = 25 ºC | 2 | ||
| Drain Current -Continuous | ID | 30 | A | TC = 100 ºC | 2 | ||
| Drain Current -Pulsed | IDM | 200 | A | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 85 | mJ | Note 1: L = 0.5mH, VDD = 15V, VGS = 10V, RG = 25Ω, Starting TJ = 25°C | 2 | ||
| Power Dissipation | PD | 60 | W | TC = 25 ºC | 2 | ||
| Power Dissipation Derating | PD | 0.5 | W/ºC | Derate above 25 ºC | 2 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | ºC | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.8 | ºC /W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | ºC /W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0 V, ID = 250 uA | 3 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS = 30 V, VGS = 0V | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20 V, VDS = 0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS = VGS, ID = 250 uA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 6.5 | 9.9 | mΩ | VGS = 10 V, ID = 15A | 3 | |
| Continuous Source Current | IS | 50 | A | 3 | |||
| Pulsed Source Current | ISM | 200 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | VGS = 0 V, IS = 15A | 3 |
CAD (KiCad official)
- Symbol:
KIA50N03BD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kia50n03bd-etched.step/kia50n03bd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia50n03bd.step/kia50n03bd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (5 pp, sha256
2274527ec5edb2d9, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).