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KIA4603AE
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKIA4603AE
KIA Semicon Tech · MOSFETs · SOP-8
KIA4603AE from KIA Semicon Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; the part is rated for 30V VDSS and 7.0A continuous drain current at TA=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; the part is rated for 30V VDSS and 7.0A continuous drain current at TA=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; the part is rated for 30V VDSS and 7.0A continuous drain current at TA=25°C. |
| 4 | G | input | Gate of the N-channel MOSFET with a gate-source voltage rating of ±20V and a threshold VGS(th) of 1.2V min to 2.5V max. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6, 7 and 8; VDSS is 30V and pulsed drain current IDM is 35A. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; VDSS is 30V and pulsed drain current IDM is 35A. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; VDSS is 30V and pulsed drain current IDM is 35A. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 7; VDSS is 30V and pulsed drain current IDM is 35A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | BVDSS | 30 | V | VGS=0V,ID=-250μA | 2 | ||
| Drain-Source Leakage Current (TJ=25°C) | IDSS | 1 | μA | VDS=24V,VGS=0V,TJ=25°C | 2 | ||
| Drain-Source Leakage Current (TJ=55°C) | IDSS | 5 | μA | VDS=24V,VGS=0V,TJ=55°C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=+20V,VDS=0V | 2 | ||
| Gate threshold voltage | VGS(th) | 1.2 | 1.5 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Static drain-source on-resistance | RDS(on) | 14.5 | 18 | mΩ | VGS=10V,ID=7A | 2 | |
| Static drain-source on-resistance | RDS(on) | 20 | 26 | mΩ | VGS=4.5V,ID=4A | 2 | |
| Diode forward voltage | VSD | 1.2 | V | VGS=0V,IS=1A,TJ=25°C | 2 | ||
| Gate resistance | Rg | 1.04 | 2.1 | Ω | VDS=0V, VGS=0V,f=1MHz | 2 | |
| Total gate charge(4.5V) | Qg | 6 | 8.4 | nC | VDS=15V,VGS=4.5V,ID=7A | 2 | |
| Gate-source charge | Qgs | 2.2 | 3.1 | nC | VDS=15V,VGS=4.5V,ID=7A | 2 | |
| Gate-drain charge | Qgd | 2 | 2.8 | nC | VDS=15V,VGS=4.5V,ID=7A | 2 | |
| Turn-on delay time | td(on) | 1.2 | 2.4 | ns | VDD=15V,RG=3.3Ω,VGS=10V,ID=7A | 2 | |
| Rise time | tr | 40 | 72 | ns | VDD=15V,RG=3.3Ω,VGS=10V,ID=7A | 2 | |
| Turn-off delay time | td(off) | 18 | 36 | ns | VDD=15V,RG=3.3Ω,VGS=10V,ID=7A | 2 | |
| Fall time | tf | 7.2 | 14.4 | ns | VDD=15V,RG=3.3Ω,VGS=10V,ID=7A | 2 | |
| Input capacitance | Ciss | 583 | 816.2 | pF | VGS=0V,VDS=15V,F=1.0MHZ | 2 | |
| Output capacitance | Coss | 77 | 107.8 | pF | VGS=0V,VDS=15V,F=1.0MHZ | 2 | |
| Reverse transfer capacitance | Crss | 59 | 82.6 | pF | VGS=0V,VDS=15V,F=1.0MHZ | 2 | |
| Continuous source current | IS | 7 | A | VG=VD=0V,Force current | 2 | ||
| Pulsed source current | ISM | 35 | A | VG=VD=0V,Force current | 2 | ||
| Drain-source voltage | VDSS | 30 | V | TA=25°C | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TA=25°C, printed as +20 | 1 | |
| Continuous drain current | ID | 7 | A | VGS@10V, TA=25ºC | 1 | ||
| Continuous drain current | ID | 5.6 | A | VGS@10V, TA=70ºC | 1 | ||
| Pulsed drain current | IDM | 35 | A | TA=25°C | 1 | ||
| Single pulse avalanche energy | EAS | 20 | mJ | VDD=25V,VGS=10V, L=0.1mH, IAS=20A | 2 | ||
| Avalanche current | IAS | 20 | A | TA=25°C | 1 | ||
| Total power dissipation | PD | 1.5 | W | TA=25ºC | 1 | ||
| Junction and storage temperature range | TJ,TSTG | -55 | 150 | ºC | 1 | ||
| Thermal resistance-junction to ambient | RθJA | 85 | ºC/W | 1 | |||
| Thermal resistance-junction to case | RθJC | 25 | ºC/W | 1 | |||
| BVDSS Temperature coefficient | △BVDSS/△TJ | 0.034 | V/°C | Reference to 25°C, ID=1mA | 2 | ||
| VGS(th) Temperature coefficient | △VGS(th) | 3.84 | mV/°C | 2 | |||
| Forward transconductance | gFS | 6.2 | S | VDS=5V,ID=7A | 2 | ||
| Reverse recovery time | trr | 7.2 | nS | IF=7A,dl/dt=100A/us, TJ=25°C | 2 | ||
| Reverse recovery charge | Qrr | 2.9 | nC | IF=7A,dl/dt=100A/us, TJ=25°C | 2 |
CAD (KiCad official)
- Symbol:
KIA4603AE - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
kia4603ae-etched.step/kia4603ae-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia4603ae.step/kia4603ae.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (4 pp, sha256
b1c9d2426e08d3d0, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).