component
KIA35P10AD
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKIA35P10AD
KIA Semicon Tech · MOSFETs · TO-252
KIA35P10AD from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±20 V (VGS). |
| 2 | Drain | passive | Drain terminal, with drain-source voltage rated at -100 V and continuous drain current of -35 A at TC=25ºC. |
| 3 | Source | passive | Source terminal, which is the reference for VGS and carries the continuous source current IS rated at -35 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -100 | V | 1 | |||
| Gate-source voltage | VGS | 20 | V | 1 | |||
| Continuous drain current | ID | -35 | A | TC=25ºC, VGS@-10V | 1 | ||
| Continuous drain current | ID | -23 | A | TC=100ºC | 1 | ||
| Pulsed drain current | IDM | -100 | A | 1 | |||
| Single pulse avalanche energy | EAS | 345 | mJ | 1 | |||
| Avalanche current | IAS | 28 | A | 1 | |||
| Total power dissipation | PD | 104 | W | TA=25ºC | 1 | ||
| Junction and storage temperature range | TJ,TSTG | -55 | ºC | 1 | |||
| Junction and storage temperature range | TJ,TSTG | 150 | ºC | 1 | |||
| Thermal resistance-junction to ambient | RθJA | 62 | ºC/W | 1 | |||
| Thermal resistance-junction to case | RθJC | 1.2 | ºC/W | 1 | |||
| Drain-Source breakdown voltage | BVDSS | -100 | V | VGS=0V, ID=-250μA | 2 | ||
| Drain-Source leakage current | IDSS | -50 | μA | VDS=-100V,VGS=0V, TJ=25°C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=+20V,VDS=0V | 2 | ||
| Gate threshold voltage | VGS(th) | -1.2 | -1.8 | -2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static drain-source on-resistance | RDS(on) | 42 | 55 | mΩ | VGS=-10V,ID=-10A | 2 | |
| Static drain-source on-resistance | RDS(on) | 46 | 60 | mΩ | VGS=-4.5V,ID=-8A | 2 | |
| Continuous source current | IS | -35 | A | VG=VD=0V, Force current | 2 | ||
| Diode forward voltage | VSD | 1.2 | V | VGS=0V,IS=-1A, TJ=25°C | 2 |
CAD (KiCad official)
- Symbol:
KIA35P10AD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kia35p10ad-etched.step/kia35p10ad-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia35p10ad.step/kia35p10ad.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (4 pp, sha256
ba6998a521f3b002, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).