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Generated by kicad-footprint-generator · KiCad file format 20260206

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KIA3407

KIA Semicon Tech · MOSFETs · SOT-23

KIA3407 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	MOSFET gate terminal; gate-source voltage is rated VGS +20 V (absolute maximum) per the absolute maximum ratings.
2	Source	passive	MOSFET source terminal; maximum body-diode continuous current is -2.2 A (IS).
3	Drain	passive	MOSFET drain terminal; drain-source voltage is -30 V (VDS) with continuous drain current of -4.1 A at TA=25°C.

Key specifications

Parameter	Value
Manufacturer	KIA Semicon Tech
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source breakdown voltage	BVDSS	-30			V	VGS=0V, ID=-250μA	3
Zero gate voltage drain current	IDSS			-1	μA	VDS=-24V, VGS=0V	3
Zero gate voltage drain current	IDSS			-5	μA	TJ=55°C	3
Gate-body leakage current	IGSS			100	nA	VGS=+20V, VDS=0V	3
Gate threshold voltage	VGS(th)	-1	-1.8	-3	V	VDS=VGS, ID=-250μA	3
On state drain current	ID(on)	-10			A	VGS=-4.5V, VDS=-5V	3
Static drain-source on-resistance	RDS(on)			60	mΩ	VGS=-10V, ID=-4.1A	3
Static drain-source on-resistance	RDS(on)			90	mΩ	VGS=-4.5V, ID=-3.0A	3
Forward transconductance	gfs	5.5	8.2		S	VDS=-5.0V, ID=-4.0A	3
Diode forward voltage	VSD		-0.77	-1	V	VGS=0V, IS=-1A	3
Maximum body-diode continuous current	IS			-2.2	A		3
Input capacitance	Ciss		700	840	pF	VDS=-15V, VGS=0V, f=1MHz	3
Gate resistance	Rg		10	15	Ω	VDS=0V, VGS=0V, f=1MHz	3
Total gate charge(10V)	Qg		14.3	18	nC	VDS=-15V, VGS=-4.5V, ID=-4.0A	3
Reverse recovery time	trr		27	36	nS	IF=-4A, dI/dt=100A/μs	3
Drain-source voltage	VDS			-30	V		2
Gate-source voltage	VGS			20	V		2
Continuous drain current	ID			-4.1	A	TA=25ºC	2
Continuous drain current	ID			-3.5	A	TA=70ºC	2
Pulsed drain current	IDM			-20	A		2
Total power dissipation	PD			1.4	W	TA=25 ºC	2
Total power dissipation	PD			1	W	TA=70ºC	2
Junction and storage temperature range	TJ ,TSTG	-55		150	ºC		2
Maximum junction-ambient (t<10s)	RθJA		65	90	ºC/W	t<10s	2
Maximum junction-ambient	RθJA		85	125	ºC/W		2
Maximum junction-Lead	RθJL		43	60	ºC/W		2

CAD (KiCad official)

Symbol: KIA3407
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: kia3407-etched.step / kia3407-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kia3407.step / kia3407.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: KIA Semicon Tech datasheet (5 pp, sha256 b093837abef4425a, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF