component
KIA3401
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| kia3401-etched.glb | 17d ago |
| kia3401-etched.step | 17d ago |
| kia3401-hero.glb | 17d ago |
| kia3401-hero.overlay.json | 17d ago |
| kia3401.glb | 17d ago |
| kia3401.kicad_mod | 17d ago |
| kia3401.kicad_sym | 17d ago |
| kia3401.lbr | 17d ago |
| kia3401.step | 17d ago |
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| page.json | 17d ago |
| README.md | 17d ago |
KIA3401
KIA Semicon Tech · MOSFETs · SOT-23
KIA3401 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; device operates with gate voltages as low as -2.5V, with VGS rated at +/-12V maximum and threshold of -0.7V to -1.3V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; VDS is -30V maximum and continuous drain current is -4.0A at TA=25C. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; VDS is -30V maximum, pulsed drain current is -30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -30 | V | 2 | |||
| Gate-source voltage | VGS | 12 | V | 2 | |||
| Continuous drain current | ID | -4 | A | TA=25ºC | 2 | ||
| Continuous drain current | ID | -3.5 | A | TA=70ºC | 2 | ||
| Pulsed drain current | IDM | -30 | A | 2 | |||
| Total power dissipation | PD | 1.4 | W | TA=25 ºC | 2 | ||
| Total power dissipation | PD | 1 | W | TA=70ºC | 2 | ||
| Junction and storage temperature range | TJ,TSTG | -55 | 150 | ºC | 2 | ||
| Maximum junction-ambient (t<10s) | RθJA | 65 | 90 | ºC/W | t<10s | 2 | |
| Maximum junction-ambient | RθJA | 85 | 125 | ºC/W | 2 | ||
| Maximum junction-lead | RθJL | 43 | 60 | ºC/W | 2 | ||
| Drain-source breakdown voltage | BVDSS | -30 | V | VGS=0V,ID=-250μA | 3 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS=-24V,VGS=0V | 3 | ||
| Gate-body leakage current | IGSS | 100 | nA | VGS=+12V,VDS=0V | 3 | ||
| Gate threshold voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS,ID=-250μA | 3 |
| On state drain current | ID(on) | -25 | A | VGS=-4.5V,VDS=-5V | 3 | ||
| Static drain-source on-resistance | RDS(on) | 50 | 60 | mΩ | VGS=-10V,ID=-4.0A | 3 | |
| Static drain-source on-resistance | RDS(on) | 60 | 70 | mΩ | VGS=-4.5V,ID=-3.0A | 3 | |
| Static drain-source on-resistance | RDS(on) | 85 | 100 | mΩ | VGS=-2.5V,ID=-1.2A | 3 | |
| Forward transconductance | gfs | 7 | 11 | S | VDS=-5.0V,ID=-5.0A | 3 | |
| Diode forward voltage | VSD | -1.2 | V | VGS=0V,IS=-1A | 3 | ||
| Maximum body-diode continuous current | IS | -2.2 | A | 3 |
CAD (KiCad official)
- Symbol:
KIA3401 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
kia3401-etched.step/kia3401-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia3401.step/kia3401.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (5 pp, sha256
3a39cf9b7b40bc3f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).