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KIA3400

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KIA Semicon Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KIA3400

KIA Semicon Tech · MOSFETs · SOT-23

KIA3400 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, operable with gate voltages as low as 2.5V, with VGS rated at ±12V maximum.
2 Source passive Source terminal of the N-channel MOSFET, with continuous body-diode current up to 2.5A.
3 Drain passive Drain terminal of the N-channel MOSFET, rated at VDS 30V and 4.8A continuous drain current (30A pulsed).

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 30 V VGS=0V,ID=250μA 3
Zero gate voltage drain current IDSS 1 μA VDS=25V, VGS=0V 3
Gate-body leakage current IGSS 100 nA VGS=+12V, VDS=0V 3
Gate threshold voltage VGS(th) 0.6 V VDS=VGS, ID=250μA 3
On state drain current ID(on) 30 A VGS=4.5V, VDS=5V 3
Static drain-source on-resistance RDS(on) 40 mΩ VGS=10V,ID=4.8A 3
Static drain-source on-resistance RDS(on) 42 mΩ VGS=4.5V,ID=4.0A 3
Static drain-source on-resistance RDS(on) 55 mΩ VGS=2.5V,ID=3.5A 3
Forward transconductance gfs 10 15 S VDS=5V, ID=4.8A 3
Diode forward voltage VSD 0.71 1.2 V VGS=0V,IS=1A 3
Maximum body-diode continuous current IS 2.5 A 3
Input capacitance Ciss 823 1030 pF VDS=15V,VGS=0V, f=1MHz 3
Gate resistance Rg 1.2 3.6 Ω VDS=0V, VGS=0V, f=1MHz 3
Total gate charge Qg 9.7 12 nC VDS=15V, VGS=4.5V, ID=5.8A 3
Turn-on delay time td(on) 3.3 5 ns VDS=15V, RL=2.7Ω, RG=3Ω, VGS=10V 3
Rise time tr 4.8 7 ns VDS=15V, RL=2.7Ω, RG=3Ω, VGS=10V 3
Turn-off delay time td(off) 26.3 40 ns VDS=15V, RL=2.7Ω, RG=3Ω, VGS=10V 3
Fall time tf 4.1 6 ns VDS=15V, RL=2.7Ω, RG=3Ω, VGS=10V 3
Reverse recovery time trr 16 20 nS IF=5A, dI/dt=100A/μs 3
Reverse recovery charge Qrr 8.9 12 nC IF=5A, dI/dt=100A/μs 3
Drain-source voltage VDS 30 V 2
Gate-source voltage VGS 12 V 2
Continuous drain current ID 4.8 A TA=25ºC 2
Pulsed drain current IDM 30 A 2
Total power dissipation PD 1.4 W TA=25 ºC 2
Total power dissipation PD 1 W TA=70ºC 2
Junction and storage temperature range TJ,TSTG -55 150 ºC 2
Maximum junction-ambient (t<10s) RθJA 65 90 ºC/W t<10s 2
Maximum junction-ambient RθJA 85 125 ºC/W 2
Maximum junction-lead RθJL 43 60 ºC/W 2

CAD (KiCad official)

  • Symbol: KIA3400
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: kia3400-etched.step / kia3400-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kia3400.step / kia3400.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (5 pp, sha256 77b8f56c963f415e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF