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KIA2306

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KIA Semicon Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KIA2306

KIA Semicon Tech · MOSFETs · SOT-23

KIA2306 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V maximum.
2 Source passive Source terminal of the N-channel MOSFET; continuous source current (diode conduction) is rated at 1.25 A.
3 Drain passive Drain terminal of the N-channel MOSFET; continuous drain current is 3.5 A at TA=25°C with drain-source voltage rated at 30 V.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 30 V 1
Gate-source voltage VGS 20 V 1
Drain current continuous ID 3.5 A TA=25°C, TJ=150 ºC 1
Drain current continuous ID 2.8 A TA=70°C 1
Pulsed drain current IDM 16 A 1
Continuous source current (diode conduction) IS 1.25 A 1
Power dissipation PD 1.25 W TA=25°C 1
Power dissipation PD 0.8 W TA=70°C 1
Junction and storage temperature range TJ,TSTG -55 150 ºC 1
Maximum junction-ambient thermal resistance RthJA 100 ºC/W t< 5 sec 1
Maximum junction-ambient thermal resistance RthJA 130 ºC/W steady state 1
Drain-source breakdown voltage V(BR)DSS 30 V VDS=0V, ID=250μA 2
Gate threshold voltage VGS(th) 1 1.8 V VDS=VGS, ID=250μA 2
Gate-body leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Zero gate voltage drain current IDSS 1 μA VDS=25V, VGS=0V 2
On-state drain current ID(on) 6 A VDS>4.5V, VGS=10V 2
On-state drain current ID(on) 4 A VDS>4.5V, VGS=4.5V 2
Static drain-source on-resistance RDS(on) 0.057 Ω VGS=10V, ID=3.5A 2
Static drain-source on-resistance RDS(on) 0.094 Ω VGS=4.5V, ID=2.8A 2
Diode forward voltage VSD 0.8 1.2 V VGS=0V, IS=1.25A 2
Total gate charge Qg 4.2 7 nC VDS=15V, VGS=5V, ID=3.5A 2
Total gate charge Qgt 20 nC VDS=15V, VGS=10V, ID=3.5A 2
Gate resistance RG 0.5 2.4 Ω 2
Turn-on delay time td(on) 9 20 ns VDD=15V, ID=1A, RL=15Ω, RG=6Ω, VGEN=10V 2
Rise time tr 7.5 18 ns VDD=15V, ID=1A, RL=15Ω, RG=6Ω, VGEN=10V 2
Turn-off delay time td(off) 17 35 ns VDD=15V, ID=1A, RL=15Ω, RG=6Ω, VGEN=10V 2
Fall time tf 5.2 12 ns VDD=15V, ID=1A, RL=15Ω, RG=6Ω, VGEN=10V 2

CAD (KiCad official)

  • Symbol: KIA2306
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: kia2306-etched.step / kia2306-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kia2306.step / kia2306.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (4 pp, sha256 77d78e87043b2e68, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF