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KIA2305
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KIA Semicon Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KIA2305
KIA Semicon Tech · MOSFETs · SOT-23
KIA2305 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±12 V maximum and threshold VGS(th) of -0.45 V to -1.0 V. |
| 2 | S | passive | Source; continuous source (body diode) current is rated at -1.6 A. |
| 3 | D | passive | Drain; VDS is rated at -20 V and continuous drain current is -3.5 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -20 | V | 1 | |||
| Gate-source voltage | VGS | 12 | V | 1 | |||
| Drain current continuous | ID | -3.5 | A | TJ=150 ºC, TA=25°C | 1 | ||
| Pulsed drain current | IDM | 12 | A | 1 | |||
| Continuous source current (diode conduction) | IS | -1.6 | A | 1 | |||
| Power dissipation | PD | 1.25 | W | TA=25°C | 1 | ||
| Junction and storage temperature range | TJ ,TSTG | -55 | 150 | ºC | 1 | ||
| Maximum junction-ambient | RthJA | 100 | ºC/W | t<5 sec | 1 | ||
| Maximum junction-ambient | 130 | ºC/W | 1 | ||||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS=0V,ID=-10μA | 2 | ||
| Gate threshold voltage | VGS(th) | -0.45 | -1 | V | VDS=VGS, ID=-250μA | 2 | |
| Gate-body leakage | IGSS | 100 | nA | VGS=+12V, VDS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | -50 | nA | VDS=-16V, VGS=0V | 2 | ||
| On-state drain current | ID(on) | -6 | A | VDS<-5V, VGS=-4.5V | 2 | ||
| On-state drain current | ID(on) | -3 | A | VDS<-5V, VGS=-2.5V | 2 | ||
| Static drain-source on-resistance | RDS(on) | 0.045 | 0.055 | Ω | VGS=-4.5V,ID=-3.5A | 2 | |
| Static drain-source on-resistance | RDS(on) | 0.06 | 0.075 | Ω | VGS=-2.5V,ID=-3.0A | 2 | |
| Static drain-source on-resistance | RDS(on) | 0.09 | 0.095 | Ω | VGS=-1.8V,ID=-2.0A | 2 | |
| Diode forward voltage | VSD | -1.28 | V | VGS=0V,IS=-1.6A | 2 | ||
| Total gate charge | Qg | 10 | 15 | nC | VDS=-4.0V, VGS=-4.5V, ID=-3.5A | 2 | |
| Turn-on delay time | td(on) | 13 | 20 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 | |
| Rise time | tr | 25 | 40 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 | |
| Turn-off delay time | td(off) | 55 | 80 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 | |
| Fall time | tf | 19 | 35 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 |
CAD (KiCad official)
- Symbol:
KIA2305 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
kia2305-etched.step/kia2305-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia2305.step/kia2305.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (4 pp, sha256
d16e1d8e2f8a2326, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KIA2305
**KIA Semicon Tech** · MOSFETs · SOT-23
KIA2305 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±12 V maximum and threshold VGS(th) of -0.45 V to -1.0 V. |
| 2 | S | passive | Source; continuous source (body diode) current is rated at -1.6 A. |
| 3 | D | passive | Drain; VDS is rated at -20 V and continuous drain current is -3.5 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -20 | | | V | | 1 |
| Gate-source voltage | VGS | | | 12 | V | | 1 |
| Drain current continuous | ID | -3.5 | | | A | TJ=150 ºC, TA=25°C | 1 |
| Pulsed drain current | IDM | | | 12 | A | | 1 |
| Continuous source current (diode conduction) | IS | -1.6 | | | A | | 1 |
| Power dissipation | PD | | | 1.25 | W | TA=25°C | 1 |
| Junction and storage temperature range | TJ ,TSTG | -55 | | 150 | ºC | | 1 |
| Maximum junction-ambient | RthJA | | | 100 | ºC/W | t<5 sec | 1 |
| Maximum junction-ambient | | | 130 | | ºC/W | | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | VGS=0V,ID=-10μA | 2 |
| Gate threshold voltage | VGS(th) | -0.45 | | -1 | V | VDS=VGS, ID=-250μA | 2 |
| Gate-body leakage | IGSS | | | 100 | nA | VGS=+12V, VDS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | -50 | nA | VDS=-16V, VGS=0V | 2 |
| On-state drain current | ID(on) | -6 | | | A | VDS<-5V, VGS=-4.5V | 2 |
| On-state drain current | ID(on) | -3 | | | A | VDS<-5V, VGS=-2.5V | 2 |
| Static drain-source on-resistance | RDS(on) | | 0.045 | 0.055 | Ω | VGS=-4.5V,ID=-3.5A | 2 |
| Static drain-source on-resistance | RDS(on) | | 0.06 | 0.075 | Ω | VGS=-2.5V,ID=-3.0A | 2 |
| Static drain-source on-resistance | RDS(on) | | 0.09 | 0.095 | Ω | VGS=-1.8V,ID=-2.0A | 2 |
| Diode forward voltage | VSD | | | -1.28 | V | VGS=0V,IS=-1.6A | 2 |
| Total gate charge | Qg | | 10 | 15 | nC | VDS=-4.0V, VGS=-4.5V, ID=-3.5A | 2 |
| Turn-on delay time | td(on) | | 13 | 20 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 |
| Rise time | tr | | 25 | 40 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 |
| Turn-off delay time | td(off) | | 55 | 80 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 |
| Fall time | tf | | 19 | 35 | ns | VDD=-4V, ID =-1.0A, RL=4Ω, RG=6Ω, VGEN=-4.5V | 2 |
## CAD (KiCad official)
- Symbol: `KIA2305`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `kia2305-etched.step` / `kia2305-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kia2305.step` / `kia2305.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KIA Semicon Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586181504854863872) (4 pp, sha256 `d16e1d8e2f8a2326`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/kia2305-datasheet.pdf)