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KIA2301
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KIA Semicon Tech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KIA2301
KIA Semicon Tech · MOSFETs · SOT-23
KIA2301 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±8 V maximum, with threshold of -0.5 to -1.0 V at ID=-250µA. |
| 2 | Source | passive | Source terminal; continuous source current (diode conduction) is limited to -1.6 A. |
| 3 | Drain | passive | Drain terminal; drain-source voltage rated -20 V and continuous drain current -2.8 A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS=0V,ID=-250μA | 2 | ||
| Gate threshold voltage | VGS(th) | -0.5 | -1 | V | VDS=VGS,ID=-250μA | 2 | |
| Gate-body leakage | IGSS | 100 | nA | VGS=+8V,VDS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | -50 | nA | VDS=-16V,VGS=0V | 2 | ||
| On-state drain current | ID(on) | -6 | A | VDS<-5V,VGS=-4.5V | 2 | ||
| On-state drain current | ID(on) | -3 | A | VDS<-5V,VGS=-2.5V | 2 | ||
| Static drain-source on-resistance | RDS(on) | 0.105 | 0.12 | Ω | VGS=-4.5V,ID=-2.8A | 2 | |
| Static drain-source on-resistance | RDS(on) | 0.145 | 0.19 | Ω | VGS=-2.5V,ID=-1.8A | 2 | |
| Diode forward voltage | VSD | -0.8 | -1.2 | V | VGS=0V,IS=-1.6A | 2 | |
| Total gate charge | Qg | 5.8 | 10 | nC | VDS=-6.0V,VGS=-4.5V,ID=-2.3A | 2 | |
| Turn-on delay time | td(on) | 13 | 25 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 | |
| Rise time | tr | 36 | 60 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 | |
| Turn-off delay time | td(off) | 42 | 70 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 | |
| Fall time | tf | 34 | 60 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 | |
| Drain-source voltage | VDS | -20 | V | 1 | |||
| Gate-source voltage | VGS | 8 | V | 1 | |||
| Drain current continuous | ID | -2.8 | A | TJ=150 ºC, TA=25°C (note b) | 1 | ||
| Drain current continuous | ID | -1.5 | A | TJ=150 ºC, TA=70°C (note b) | 1 | ||
| Pulsed drain current | IDM | -10 | A | Pulse width limited by maximum junction temperature (note a) | 1 | ||
| Continuous source current (diode conduction) | IS | -1.6 | A | Note b | 1 | ||
| Power dissipation | PD | 1.25 | W | TA=25°C (note b) | 1 | ||
| Power dissipation | PD | 0.8 | W | TA=70°C (note b) | 1 | ||
| Junction and storage temperature range | TJ,TSTG | -55 | 150 | ºC | 1 | ||
| Maximum junction-ambient | RthJA | 100 | ºC/W | Surface mounted on FR4 board, t<5 sec (note b) | 1 | ||
| Maximum junction-ambient | RthJA | 166 | ºC/W | Surface mounted on FR4 board (note c) | 1 |
CAD (KiCad official)
- Symbol:
KIA2301 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
kia2301-etched.step/kia2301-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia2301.step/kia2301.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (4 pp, sha256
ab7f635efff93f64, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KIA2301
**KIA Semicon Tech** · MOSFETs · SOT-23
KIA2301 from KIA Semicon Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±8 V maximum, with threshold of -0.5 to -1.0 V at ID=-250µA. |
| 2 | Source | passive | Source terminal; continuous source current (diode conduction) is limited to -1.6 A. |
| 3 | Drain | passive | Drain terminal; drain-source voltage rated -20 V and continuous drain current -2.8 A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | VGS=0V,ID=-250μA | 2 |
| Gate threshold voltage | VGS(th) | -0.5 | | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Gate-body leakage | IGSS | | | 100 | nA | VGS=+8V,VDS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | -50 | nA | VDS=-16V,VGS=0V | 2 |
| On-state drain current | ID(on) | -6 | | | A | VDS<-5V,VGS=-4.5V | 2 |
| On-state drain current | ID(on) | -3 | | | A | VDS<-5V,VGS=-2.5V | 2 |
| Static drain-source on-resistance | RDS(on) | | 0.105 | 0.12 | Ω | VGS=-4.5V,ID=-2.8A | 2 |
| Static drain-source on-resistance | RDS(on) | | 0.145 | 0.19 | Ω | VGS=-2.5V,ID=-1.8A | 2 |
| Diode forward voltage | VSD | | -0.8 | -1.2 | V | VGS=0V,IS=-1.6A | 2 |
| Total gate charge | Qg | | 5.8 | 10 | nC | VDS=-6.0V,VGS=-4.5V,ID=-2.3A | 2 |
| Turn-on delay time | td(on) | | 13 | 25 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 |
| Rise time | tr | | 36 | 60 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 |
| Turn-off delay time | td(off) | | 42 | 70 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 |
| Fall time | tf | | 34 | 60 | ns | VDD=-6V,ID=-1.0A,RL=6Ω,RG=6Ω,VGEN=-4.5V | 2 |
| Drain-source voltage | VDS | | | -20 | V | | 1 |
| Gate-source voltage | VGS | | | 8 | V | | 1 |
| Drain current continuous | ID | | | -2.8 | A | TJ=150 ºC, TA=25°C (note b) | 1 |
| Drain current continuous | ID | | | -1.5 | A | TJ=150 ºC, TA=70°C (note b) | 1 |
| Pulsed drain current | IDM | | | -10 | A | Pulse width limited by maximum junction temperature (note a) | 1 |
| Continuous source current (diode conduction) | IS | | | -1.6 | A | Note b | 1 |
| Power dissipation | PD | | | 1.25 | W | TA=25°C (note b) | 1 |
| Power dissipation | PD | | | 0.8 | W | TA=70°C (note b) | 1 |
| Junction and storage temperature range | TJ,TSTG | -55 | | 150 | ºC | | 1 |
| Maximum junction-ambient | RthJA | | | 100 | ºC/W | Surface mounted on FR4 board, t<5 sec (note b) | 1 |
| Maximum junction-ambient | RthJA | | | 166 | ºC/W | Surface mounted on FR4 board (note c) | 1 |
## CAD (KiCad official)
- Symbol: `KIA2301`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `kia2301-etched.step` / `kia2301-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kia2301.step` / `kia2301.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KIA Semicon Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586181053211533312) (4 pp, sha256 `ab7f635efff93f64`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/kia2301-datasheet.pdf)