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KI2333CDS

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by adom

KEXIN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KI2333CDS

KEXIN · MOSFETs · SOT-23

KI2333CDS from KEXIN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET; gate-source voltage is rated at ±8 V (VGS).
2 Source passive Source terminal of the P-channel MOSFET; the datasheet gives no separate pin limit, and the device is rated for a drain-source voltage of -12 V (VDS).
3 Drain passive Drain terminal of the P-channel MOSFET; rated for -12 V drain-source voltage and -5.1 A continuous drain current at Ta = 25℃ (steady state).

Key specifications

Parameter Value
Manufacturer KEXIN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -12 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -7.1 A Ta = 25℃, 5 sec 1
Continuous Drain Current ID -5.7 A Ta = 70℃, 5 sec 1
Continuous Drain Current ID -5.1 A Ta = 25℃, steady state 1
Continuous Drain Current ID -4 A Ta = 70℃, steady state 1
Pulsed Drain Current IDM -20 A 1
Power Dissipation PD 2.5 W Ta = 25℃, 5 sec 1
Power Dissipation PD 1.25 W Ta = 25℃, steady state 1
Power Dissipation PD 1.6 W Ta = 70℃, 5 sec 1
Power Dissipation PD 0.8 W Ta = 70℃, steady state 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RthJA 50 ℃/W 5 sec 1
Thermal Resistance Junction-to-Ambient RthJA 100 ℃/W Steady State 1
Thermal Resistance Junction-to-Foot RthJF 50 ℃/W 1
Drain-Source Breakdown Voltage VDSS -12 V ID=-250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-12V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -10 μA VDS=-12V, VGS=0V, TJ=55℃ 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±8V 2
Gate Threshold Voltage VGS(th) -0.4 -1 V VDS=VGS ID=-250μA 2
Static Drain-Source On-Resistance RDS(on) 28.5 35 mΩ VGS=-4.5V, ID=-5.1A 2
Static Drain-Source On-Resistance RDS(on) 36 45 mΩ VGS=-2.5V, ID=-4.5A 2
Static Drain-Source On-Resistance RDS(on) 46 59 mΩ VGS=-1.8V, ID=-2.0A 2
On state drain current ID(ON) -20 A VGS=-4.5V, VDS=-5V 2
Total Gate Charge Qg 15 25 nC VGS=-4.5V, VDS=-6V, ID=-5.1A 2
Total Gate Charge Qg 9 15 nC VGS=-2.5V, VDS=-6V, ID=-5.1A 2
Turn-On DelayTime td(on) 13 20 ns VGS=-4.5V, VDS=-6V, RL=6Ω, RGEN=1Ω, ID=-1.0A 2
Turn-On Rise Time tr 35 60 ns VGS=-4.5V, VDS=-6V, RL=6Ω, RGEN=1Ω, ID=-1.0A 2
Turn-Off DelayTime td(off) 45 70 ns VGS=-4.5V, VDS=-6V, RL=6Ω, RGEN=1Ω, ID=-1.0A 2
Turn-Off Fall Time tf 12 20 ns VGS=-4.5V, VDS=-6V, RL=6Ω, RGEN=1Ω, ID=-1.0A 2
Body Diode Reverse Recovery Charge Qrr 20 40 nC IF = 1.0 A, di/dt = 100 A/ us, TJ=25℃ 2
Body Diode Reverse Recovery Time trr 32 50 ns IF = 1.0 A, di/dt = 100 A/ us, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS -1 A TC=25℃ 2
Pulse Diode Forward Current ISM -20 A 2
Diode Forward Voltage VSD -0.7 -1.2 V IS=-1.0A, VGS=0V 2

CAD (KiCad official)

  • Symbol: KI2333CDS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ki2333cds-etched.step / ki2333cds-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ki2333cds.step / ki2333cds.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEXIN datasheet (5 pp, sha256 80f7219511f7bdaa, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF