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KGF40N65KDC-U

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KEC Semicon IGBT Transistors / Modules, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KGF40N65KDC-U

KEC Semicon · IGBT Transistors / Modules · TO-247

KGF40N65KDC-U from KEC Semicon, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the IGBT; gate-emitter voltage is rated VGES ±20 V.
2 Collector passive Collector terminal of the IGBT; collector-emitter voltage is rated VCES 650 V.
3 Emitter passive Emitter terminal of the IGBT; reference for the gate-emitter voltage VGES ±20 V.

Key specifications

Parameter Value
Manufacturer KEC Semicon
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 650 V 1
Gate-Emitter Voltage VGES -20 20 V 1
Collector Current IC 80 A Tc=25 1
Collector Current IC 40 A Tc=100 1
Pulsed Collector Current ICM 120 A Repetitive rating: pulse width limited by max. junction temperature 1
Diode Continuous Forward Current IF 40 A Tc=100 1
Diode Maximum Forward Current IFM 80 A 1
Maximum Power Dissipation PD 208 W Tc=25 1
Maximum Power Dissipation PD 104 W Tc=100 1
Maximum Junction Temperature Tj 175 °C 1
Storage Temperature Range Tstg -55 150 °C 1
Thermal Resistance, Junction to Case (IGBT) Rth JC 0.72 °C/W 1
Thermal Resistance, Junction to Case (DIODE) Rth JC 1.55 °C/W 1
Thermal Resistance, Junction to Ambient Rth JA 40 °C/W 1
Collector-Emitter Breakdown Voltage BVCES 650 V VGE=0V, IC=250μA 2
Collector Cut-off Current ICES 250 μA VGE=0V, VCE=650V 2
Gate Leakage Current IGES 100 nA VCE=0V, VGE=±20V 2
Gate Threshold Voltage VGE(th) 5 6.2 7.5 V VGE=VCE, IC=4mA 2
Collector-Emitter Saturation Voltage VCE(sat) 1.75 2.3 V VGE=15V, IC=40A 2
Collector-Emitter Saturation Voltage VCE(sat) 2.5 V VGE=15V, IC=80A 2
Collector-Emitter Saturation Voltage VCE(sat) 2.2 V VGE=15V, IC=40A, TC = 175 2
Total Gate Charge Qg 90 nC VCC=300V, VGE=15V, IC= 40A 2
Gate-Emitter Charge Qge 21 nC VCC=300V, VGE=15V, IC= 40A 2
Gate-Collector Charge Qgc 46 nC VCC=300V, VGE=15V, IC= 40A 2
Turn-On Delay Time td(on) 60 ns VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 25 (Note 1) 2
Rise Time tr 30 ns VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 25 (Note 1) 2
Turn-Off Delay Time td(off) 110 ns VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 25 (Note 1) 2
Fall Time tf 30 ns VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 25 (Note 1) 2
Turn-On Switching Loss Eon 0.95 1.24 mJ VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 25 (Note 1) 2
Turn-Off Switching Loss Eoff 0.55 0.72 mJ VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 25 (Note 1) 2
Total Switching Loss Ets 1.5 1.96 mJ VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 25 (Note 1) 2
Rise Time tr 40 ns VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 175 (Note 1) 2
Turn-Off Delay Time td(off) 115 ns VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 175 (Note 1) 2
Fall Time tf 50 ns VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 175 (Note 1) 2
Turn-On Switching Loss Eon 1.1 mJ VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 175 (Note 1) 2
Turn-Off Switching Loss Eoff 0.8 mJ VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 175 (Note 1) 2
Total Switching Loss Ets 1.9 mJ VCC=300V, IC=40A, VGE=15V, RG=10, Inductive Load, TC = 175 (Note 1) 2
Input Capacitance Cies 2300 3000 pF VCE=30V, VGE=0V, f=1MHz 2
Output Capacitance Coes 110 pF VCE=30V, VGE=0V, f=1MHz 2
Reverse Transfer Capacitance Cres 30 pF VCE=30V, VGE=0V, f=1MHz 2
Diode Forward Voltage VF 1.91 2.5 V IF = 20A, TC=25 3
Diode Forward Voltage VF 1.76 V IF = 20A, TC=175 3
Diode Reverse Recovery Time trr 97 ns IF =20A, di/dt =200A/μs, TC=25 3
Diode Reverse Recovery Time trr 171 ns IF =20A, di/dt =200A/μs, TC=175 3
Diode Peak Reverse Recovery Current Irr 3.9 A IF =20A, di/dt =200A/μs, TC=25 3
Diode Peak Reverse Recovery Current Irr 4.6 A IF =20A, di/dt =200A/μs, TC=175 3
Diode Reverse Recovery Charge Qrr 0.22 μC IF =20A, di/dt =200A/μs, TC=25 3
Diode Reverse Recovery Charge Qrr 0.48 μC IF =20A, di/dt =200A/μs, TC=175 3

CAD (KiCad official)

  • Symbol: KGF40N65KDC-U
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: kgf40n65kdc-u-etched.step / kgf40n65kdc-u-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kgf40n65kdc-u.step / kgf40n65kdc-u.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEC Semicon datasheet (8 pp, sha256 d615a396b778fda5, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF