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Ray Set visibility: public 226ae5e 15d ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "kcy3406a",
  "title": "KCY3406A",
  "brief": "KIA Semicon Tech MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "kcy3406a",
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    "extractor-text"
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  "component": {
    "mpn": "KCY3406A",
    "manufacturer": "KIA Semicon Tech",
    "package": "DFN5x6-8",
    "pin_count": 9,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/73180eb0139c92cd7c3618b9b15b7898.pdf",
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      "model_3d_step_plain": "kcy3406a.step",
      "lbr": "kcy3406a.lbr"
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    "distributor_links": {
      "lcsc": "C5156065"
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    "distributor_check": {
      "checked_at": "2026-10-22T22:29:54Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
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      "mouser": {
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        "name": "Source",
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      {
        "number": "2",
        "name": "Source",
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        "description": "Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); 80A, 60V device."
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      {
        "number": "3",
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        "description": "Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); 80A, 60V device."
      },
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        "name": "Gate",
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        "description": "Gate terminal with VGSS rating of ±20 V and threshold voltage 1.0 to 3.0 V."
      },
      {
        "number": "5",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C."
      },
      {
        "number": "6",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C."
      },
      {
        "number": "7",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C."
      },
      {
        "number": "8",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
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        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin table is from page 1 and the pin diagram image is not in the text. The ordering table lists KCY3"
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        "pages_sent": 6,
        "cost_usd": 0.0442,
        "at": "2026-10-22T22:29:45"
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        "sha256": "c40b00f0c6caab01",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
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  "metadata": {
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      "Package": "DFN5x6-8",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "9"
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          "unit": "mJ",
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          "conditions": "L=0.5mH, VDD=50V, RG=10Ω, starting TJ=25°C",
          "source_page": 2,
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        {
          "name": "Operation Junction Temperature Range",
          "symbol": "TJ",
          "kind": "absolute_maximum",
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          "min": -55,
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          "name": "Storage Temperature Range",
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          "min": -55,
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          "name": "Thermal Resistance, Junction-to-Case",
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          "max": 2,
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        {
          "name": "Thermal Resistance, Junction-to-Ambient",
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          "kind": "thermal",
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          "typ": null,
          "max": 62,
          "conditions": "",
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        {
          "name": "Drain-to-Source Breakdown Voltage",
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          "kind": "electrical",
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          "min": 60,
          "typ": null,
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          "conditions": "VGS=0V, ID=250uA",
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          "name": "Drain-to-Source Leakage Current",
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          "max": 80,
          "conditions": "Integral Reverse P-N Junction Diode in the MOSFET",
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          "conditions": "IS=13.5A, VGS=0V",
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          "name": "Gate Resistance",
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          "conditions": "F=1MHz",
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          "name": "Reverse Transfer Capacitance",
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          "kind": "electrical",
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          "typ": 22,
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          "name": "Turn-on Delay Time",
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          "kind": "timing",
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          "min": null,
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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