# KCY3406A

**KIA Semicon Tech** · MOSFETs · DFN5x6-8

KCY3406A from KIA Semicon Tech, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); 80A, 60V device. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); 80A, 60V device. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET (pins 1,2,3 are Source); 80A, 60V device. |
| 4 | Gate | input | Gate terminal with VGSS rating of ±20 V and threshold voltage 1.0 to 3.0 V. |
| 5 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C. |
| 6 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C. |
| 7 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C. |
| 8 | Drain | passive | Drain terminal (pins 5,6,7,8 are Drain) with VDSS of 60 V and continuous current of 80 A at TC=25°C. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | DFN5x6-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 60 | V | TC=25℃ | 2 |
| Gate-to-Source Voltage | VGSS | -20 |  | 20 | V | TC=25℃ | 2 |
| Continuous Drain Current | ID |  |  | 80 | A | TC=25°C | 2 |
| Continuous Drain Current | ID |  |  | 48 | A | TC=100°C | 2 |
| Pulsed Drain Current | IDM |  |  | 240 | A | at VGS=10V | 2 |
| Power Dissipation | PD |  |  | 63 | W | TC=25°C | 2 |
| Derating Factor above 25°C |  |  |  | 0.5 | W/°C |  | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 81 | mJ | L=0.5mH, VDD=50V, RG=10Ω, starting TJ=25°C | 2 |
| Operation Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 2 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 62 | °C/W |  | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=60V, VGS=0V | 3 |
| Gate-to-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(TH) | 1 | 2 | 3 | V | VDS=VGS, ID=250uA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  | 8.5 | 9.5 | mΩ | VGS=10V, ID=13.5A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  | 13 | 15 | mΩ | VGS=4.5V, ID=11.5A | 3 |
| Continuous Source Current | ISD |  |  | 80 | A | Integral Reverse P-N Junction Diode in the MOSFET | 3 |
| Pulsed Source Current | ISM |  |  | 240 | A | Integral Reverse P-N Junction Diode in the MOSFET | 3 |
| Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=13.5A, VGS=0V | 3 |
| Gate Resistance | RG |  | 1.8 |  | Ω | F=1MHz | 3 |
| Input Capacitance | Ciss |  | 1065 |  | pF | F=1.0MHz, VGS=0V, VDS=30V | 3 |
| Output Capacitance | Coss |  | 430 |  | pF | F=1.0MHz, VGS=0V, VDS=30V | 3 |
| Reverse Transfer Capacitance | Crss |  | 22 |  | pF | F=1.0MHz, VGS=0V, VDS=30V | 3 |
| Turn-on Delay Time | td(ON) |  | 8 |  | nS | VDD=30V, VGS=10V, RG=3Ω, ID=13.5A | 3 |
| Rise Time | trise |  | 54 |  | nS | VDD=30V, VGS=10V, RG=3Ω, ID=13.5A | 3 |
| Turn-Off Delay Time | td(OFF) |  | 19 |  | nS | VDD=30V, VGS=10V, RG=3Ω, ID=13.5A | 3 |
| Fall Time | tfall |  | 8.8 |  | nS | VDD=30V, VGS=10V, RG=3Ω, ID=13.5A | 3 |
| Total Gate Charge | Qg |  | 16.8 |  | nC | VDD=48V, VGS=10V, ID=13.5A | 3 |
| Gate-to-Source Charge | Qgs |  | 5.9 |  | nC | VDD=48V, VGS=10V, ID=13.5A | 3 |
| Gate-to-Drain (Miller) Charge | Qgd |  | 2.7 |  | nC | VDD=48V, VGS=10V, ID=13.5A | 3 |
| Reverse Recovery Time | trr |  | 52 |  | ns | IS=13.5A, VGS=0V, dIF/dt=100A/us | 3 |
| Reverse Recovery Charge | Qrr |  | 0.05 |  | nC | IS=13.5A, VGS=0V, dIF/dt=100A/us | 3 |

## CAD (KiCad official)

- Symbol: `KCY3406A`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `kcy3406a-etched.step` / `kcy3406a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kcy3406a.step` / `kcy3406a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KIA Semicon Tech datasheet](docs/kcy3406a-datasheet.pdf) (6 pp, sha256 `c40b00f0c6caab01`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kcy3406a-datasheet.pdf)