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KCY3310A

Public Made by Adom

by adom

KIA Semicon Tech MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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kcy3310a-hero.glb kcy3310a: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
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page.json kcy3310a: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 17d ago
README.md kcy3310a: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 17d ago

KCY3310A

KIA Semicon Tech · MOSFETs · DFN-8(5x6)

KCY3310A from KIA Semicon Tech, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the 100 V N-channel MOSFET; the body diode continuous forward current IS is rated 90 A max, with diode forward voltage VSD up to 1.3 V at IS = 20 A.
2 Source passive Source terminal of the 100 V N-channel MOSFET; the body diode continuous forward current IS is rated 90 A max, with diode forward voltage VSD up to 1.3 V at IS = 20 A.
3 Source passive Source terminal of the 100 V N-channel MOSFET; the body diode continuous forward current IS is rated 90 A max, with diode forward voltage VSD up to 1.3 V at IS = 20 A.
4 Gate input Gate terminal; the gate-source voltage VGS is rated ±20 V, and the gate threshold VGS(th) is 2 V min, 2.8 V typ, 4 V max at VDS = VGS, ID = 250 µA.
5 Drain passive Drain terminal; the drain-source breakdown voltage BVDSS is 100 V min at VGS = 0 V, ID = 250 µA, and the DFN5*6 continuous drain current ID is 85 A at TC = 25 ºC.
6 Drain passive Drain terminal; the drain-source breakdown voltage BVDSS is 100 V min at VGS = 0 V, ID = 250 µA, and the DFN5*6 continuous drain current ID is 85 A at TC = 25 ºC.
7 Drain passive Drain terminal; the drain-source breakdown voltage BVDSS is 100 V min at VGS = 0 V, ID = 250 µA, and the DFN5*6 continuous drain current ID is 85 A at TC = 25 ºC.
8 Drain passive Drain terminal; the drain-source breakdown voltage BVDSS is 100 V min at VGS = 0 V, ID = 250 µA, and the DFN5*6 continuous drain current ID is 85 A at TC = 25 ºC.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 100 V 2
Continuous Drain Current ID 85 A TC=25 ºC (DFN5*6) 2
Continuous Drain Current ID 56 A TC=100 ºC (DFN5*6) 2
Pulsed drain current IDM 340 A note1: repetitive rating, pulse width limited by max. junction temperature (DFN5*6) 2
Avalanche energy EAS 529 mJ note2: VDD=50V, RG=25Ω, L=0.5mH, IAS=46A 2
Gate-Source voltage VGS -20 20 V printed ±20 2
Power dissipation PD 90 W TC=25 ºC (DFN5*6), note3 2
Power dissipation PD 36 W TC=100 ºC (DFN5*6), note3 2
Junction & Storage Temperature Range TJ & TSTG -55 150 ºC 2
Drain-source breakdown voltage BVDSS 100 V VGS=0V, ID=250μA 3
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 3
Gate threshold voltage VGS(th) 2 2.8 4 V VDS=VGS, ID=250μA 3
Gate leakage current IGSS -100 100 nA VGS=±20V, VDS=0V; printed ±100 3
Drain-source on-resistance RDS(on) 5 5.8 mΩ VGS=10V, ID=20A 3
Diode forward voltage VSD 1.3 V VGS=0V, IS=20A 3
Body Diode Continuous Forward Current IS 90 A 3
Thermal resistance, junction-ambient RθJA 20 ºC/W t≤10S, mounted on 1in2 FR-4 board with 2oz copper, still air, TA=25°C (DFN5*6) 2
Thermal resistance, junction-ambient RθJA 50 ºC/W Steady-State, mounted on 1in2 FR-4 board with 2oz copper, still air, TA=25°C (DFN5*6) 2
Thermal resistance, junction-case RθJC 1.38 ºC/W Steady-State (DFN5*6) 2

CAD (KiCad official)

  • Symbol: KCY3310A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: kcy3310a-etched.step / kcy3310a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kcy3310a.step / kcy3310a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (5 pp, sha256 f50659cfbbde3c61, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF