component
KCY3310A
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
kcy3310a: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+262−1
README.md+26@@ -27,6 +27,32 @@ KCY3310A from KIA Semicon Tech, in a DFN-8(5x6). Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 100 | V | | 2 |+| Continuous Drain Current | ID | | | 85 | A | TC=25 ºC (DFN5*6) | 2 |+| Continuous Drain Current | ID | | | 56 | A | TC=100 ºC (DFN5*6) | 2 |+| Pulsed drain current | IDM | | | 340 | A | note1: repetitive rating, pulse width limited by max. junction temperature (DFN5*6) | 2 |+| Avalanche energy | EAS | | | 529 | mJ | note2: VDD=50V, RG=25Ω, L=0.5mH, IAS=46A | 2 |+| Gate-Source voltage | VGS | -20 | | 20 | V | printed ±20 | 2 |+| Power dissipation | PD | | | 90 | W | TC=25 ºC (DFN5*6), note3 | 2 |+| Power dissipation | PD | | | 36 | W | TC=100 ºC (DFN5*6), note3 | 2 |+| Junction & Storage Temperature Range | TJ & TSTG | -55 | | 150 | ºC | | 2 |+| Drain-source breakdown voltage | BVDSS | 100 | | | V | VGS=0V, ID=250μA | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V | 3 |+| Gate threshold voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS, ID=250μA | 3 |+| Gate leakage current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V; printed ±100 | 3 |+| Drain-source on-resistance | RDS(on) | | 5 | 5.8 | mΩ | VGS=10V, ID=20A | 3 |+| Diode forward voltage | VSD | | | 1.3 | V | VGS=0V, IS=20A | 3 |+| Body Diode Continuous Forward Current | IS | | | 90 | A | | 3 |+| Thermal resistance, junction-ambient | RθJA | | 20 | | ºC/W | t≤10S, mounted on 1in2 FR-4 board with 2oz copper, still air, TA=25°C (DFN5*6) | 2 |+| Thermal resistance, junction-ambient | RθJA | | 50 | | ºC/W | Steady-State, mounted on 1in2 FR-4 board with 2oz copper, still air, TA=25°C (DFN5*6) | 2 |+| Thermal resistance, junction-case | RθJC | | 1.38 | | ºC/W | Steady-State (DFN5*6) | 2 |+ ## CAD (KiCad official) - Symbol: `KCY3310A`
page.json+236−1@@ -184,6 +184,241 @@ "Package": "DFN-8(5x6)", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f50659cfbbde3c61",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "TC=25 ºC (DFN5*6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 56,+ "conditions": "TC=100 ºC (DFN5*6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 340,+ "conditions": "note1: repetitive rating, pulse width limited by max. junction temperature (DFN5*6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 529,+ "conditions": "note2: VDD=50V, RG=25Ω, L=0.5mH, IAS=46A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "printed ±20",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "TC=25 ºC (DFN5*6), note3",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "TC=100 ºC (DFN5*6), note3",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction & Storage Temperature Range",+ "symbol": "TJ & TSTG",+ "kind": "absolute_maximum",+ "unit": "ºC",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=100V, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 2.8,+ "max": 4,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V; printed ±100",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5,+ "max": 5.8,+ "conditions": "VGS=10V, ID=20A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "VGS=0V, IS=20A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Continuous Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "t≤10S, mounted on 1in2 FR-4 board with 2oz copper, still air, TA=25°C (DFN5*6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "Steady-State, mounted on 1in2 FR-4 board with 2oz copper, still air, TA=25°C (DFN5*6)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "ºC/W",+ "min": null,+ "typ": 1.38,+ "max": null,+ "conditions": "Steady-State (DFN5*6)",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -225,4 +460,4 @@ "visibility": { "public": true }-}+}