component
KCD3406A
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKCD3406A
KIA Semicon Tech · MOSFETs · TO-252
KCD3406A from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the datasheet limits gate-to-source voltage VGSS to ±20 V. |
| 2 | Drain | passive | Drain of the N-channel MOSFET; rated VDSS 60 V with continuous drain current ID of 80 A at TC=25°C. |
| 3 | Source | passive | Source of the N-channel MOSFET; the integral body diode is rated for continuous source current ISD of 80 A and pulsed source current ISM of 240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 3 | ||
| Gate Threshold Voltage | VGS(TH) | 1 | 2 | 3 | V | VDS=VGS, ID=250uA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | 8.5 | 9.5 | mΩ | VGS=10V, ID=13.5A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 13 | 15 | mΩ | VGS=4.5V, ID=11.5A | 3 | |
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 3 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Continuous Source Current | ISD | 80 | A | Integral Reverse P-N Junction Diode in the MOSFET | 3 | ||
| Pulsed Source Current | ISM | 240 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.4 | V | IS=13.5A, VGS=0V | 3 | ||
| Drain-to-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-to-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 80 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | 48 | A | TC=100°C | 2 | ||
| Pulsed Drain Current | IDM | 240 | A | VGS=10V | 2 | ||
| Power Dissipation | PD | 63 | W | TC=25°C | 2 | ||
| Derating Factor above 25°C | 0.5 | W/°C | above 25°C | 2 | |||
| Single Pulsed Avalanche Energy | EAS | 81 | mJ | L=0.5mH, VDD=50V, RG=10Ω, starting TJ=25°C | 2 | ||
| Operation Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
KCD3406A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kcd3406a-etched.step/kcd3406a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kcd3406a.step/kcd3406a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (6 pp, sha256
c98553128108ba89, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).