component
KCD2908A
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
← Commit history
page.json+6−3@@ -32,13 +32,13 @@ "number": "1", "name": "Gate", "type": "input",- "description": "Gate terminal of the N-channel MOSFET. Controls channel conduction via VGS; threshold voltage VGS(th) = 2.0-4.0 V (typ 3.0 V), absolute maximum VGS = \u00b120 V. Typical drive is VGS = 10 V for full enhancement (RDS(on) typ 4.3 m\u03a9)."+ "description": "Gate terminal of the N-channel MOSFET. Controls channel conduction via VGS; threshold voltage VGS(th) = 2.0-4.0 V (typ 3.0 V), absolute maximum VGS = ±20 V. Typical drive is VGS = 10 V for full enhancement (RDS(on) typ 4.3 mΩ)." }, { "number": "2", "name": "Drain", "type": "passive",- "description": "Drain terminal of the N-channel MOSFET, also connected to the TO-252 tab. Drain-to-source breakdown voltage BVDSS = 85 V min; continuous ID = 110 A at TC=25 \u00b0C (TO-252); pulsed IDP = 480 A. Body diode anode is Source, cathode is Drain (VSD typ 0.85 V @ 40 A)."+ "description": "Drain terminal of the N-channel MOSFET, also connected to the TO-252 tab. Drain-to-source breakdown voltage BVDSS = 85 V min; continuous ID = 110 A at TC=25 °C (TO-252); pulsed IDP = 480 A. Body diode anode is Source, cathode is Drain (VSD typ 0.85 V @ 40 A)." }, { "number": "3",@@ -118,5 +118,8 @@ "docs/kcd2908a-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }