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Contents

README

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KCD2908A

KIA Semicon Tech · MOSFETs · TO-252

KCD2908A from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET. Controls channel conduction via VGS; threshold voltage VGS(th) = 2.0-4.0 V (typ 3.0 V), absolute maximum VGS = ±20 V. Typical drive is VGS = 10 V for full enhancement (RDS(on) typ 4.3 mΩ).
2 Drain passive Drain terminal of the N-channel MOSFET, also connected to the TO-252 tab. Drain-to-source breakdown voltage BVDSS = 85 V min; continuous ID = 110 A at TC=25 °C (TO-252); pulsed IDP = 480 A. Body diode anode is Source, cathode is Drain (VSD typ 0.85 V @ 40 A).
3 Source passive Source terminal of the N-channel MOSFET and reference for VGS. Carries the drain current back to the load return; also forms the anode of the intrinsic body diode (reverse recovery time trr typ 68 ns, Qrr typ 260 nC).

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • KCD2908A
  • KCD2908AKCB2908A

CAD (KiCad official)

  • Symbol: KCD2908A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: kcd2908a-etched.step / kcd2908a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kcd2908a.step / kcd2908a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (None pp, sha256 120b2a37db0c934e, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF