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KCB2904A

Public Made by Adom

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KIA Semicon Tech MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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KCB2904A

KIA Semicon Tech · MOSFETs · TO-263

KCB2904A from KIA Semicon Tech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel SGT MOSFET, rated for VGS of ±20 V per the absolute maximum ratings.
2 Drain passive Drain terminal of the N-channel SGT MOSFET, rated for VDS of 45 V per the absolute maximum ratings.
3 Source passive Source terminal of the N-channel SGT MOSFET, serving as the return path for the drain current.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 45 V VGS=0V, ID=250uA 3
Gate threshold voltage VGS(th) 2 4 V VDS=VGS, ID=250uA 3
Zero gate voltage drain current IDSS 0.05 1 uA VDS=45V, VGS=0V, Tj=25°C 3
Zero gate voltage drain current IDSS 100 uA VDS=45V, VGS=0V, Tj=150°C 3
Gate-source leakage current IGSS 10 100 nA VGS=±20V, VDS=0V 3
Drain-source on-state resistance RDS(on) 2 2.6 mΩ VGS=10V, ID=20A 3
Body Diode Forward Voltage VSD 0.78 1.2 V VGS=0V, ISD=20A 3
Body Diode Continuous Forward Current IS 216 A TC=25°C 3
Body Diode Pulsed Current IS pulse 865 A TC=25°C 3
Drain-source voltage VDS 45 V 2
Continuous drain current (Silicon limit) ID 130 A TC=25°C (Silicon limit) 2
Continuous drain current (Package limit) ID 300 A TC=25°C (Package limit) 2
Continuous drain current (Silicon limit) ID 137 A TC=100°C (Silicon limit) 2
Continuous drain current ID 24 A Ta=25°C 2
Pulsed drain current ID pulse 865 A TC=25°C, tp=100uS 2
Avalanche energy, single pulse EAS 200 mJ L=0.5Mh, Vds=32V 2
Gate-Source voltage VGS -20 20 V 2
Power dissipation Ptot 125 W TC=25°C 2
Power dissipation Ptot 1.5 W Ta=25°C 2
Operating junction and storage temperature Tj, Tstg -55 150 °C 2
Soldering temperature, wave soldering Tsold 260 °C at leads (1.6mm from case for 10s) 2
Junction-to-Case Thermal Resistance RθJC 1 ºC/W 2
Junction-to-Ambient Thermal Resistance RθJA 81 ºC/W 2

CAD (KiCad official)

  • Symbol: KCB2904A
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: kcb2904a-etched.step / kcb2904a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kcb2904a.step / kcb2904a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (7 pp, sha256 ae9a65e5eb3a4590, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF