# KBU810

**MDD（Microdiode Electronics）** · Bridge Rectifiers · KBU

KBU810 from MDD（Microdiode Electronics）, in a KBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | power_out | Positive DC output of the bridge rectifier; the diagram marks pin 1 with a plus sign. |
| 2 | AC1 | passive | AC input terminal marked with a ~ symbol; the datasheet rates VRMS at up to 700 V for KBU810. |
| 3 | AC2 | passive | Second AC input terminal marked with a ~ symbol; the datasheet rates VRMS at up to 700 V for KBU810. |
| 4 | - | power_in | Negative DC output of the bridge rectifier; the diagram marks pin 4 with a minus sign. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | KBU |
| Category | Diodes |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM |  |  | 1000 | V |  | 1 |
| Maximum RMS voltage | VRMS |  |  | 700 | V |  | 1 |
| Maximum DC blocking voltage | VDC |  |  | 1000 | V |  | 1 |
| Maximum average forward output rectified current | I(AV) |  |  | 8 | A | at TA=50 ℃ | 1 |
| Peak forward surge current | IFSM |  |  | 300 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 |
| Maximum instantaneous forward voltage drop per bridge element | VF |  |  | 1.1 | V | per bridge element at 8.0A | 1 |
| Maximum DC reverse current | IR |  |  | 10 | μA | TA=25°C at rated DC blocking voltage | 1 |
| Maximum DC reverse current | IR |  |  | 0.5 | mA | TA=125°C at rated DC blocking voltage | 1 |
| Typical Junction Capacitance (Note 1) | CJ |  | 200 |  | pF |  | 1 |
| Typical Thermal Resistance (Note 2) | RθJA |  | 2.7 |  | °C/W |  | 1 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage temperature range | TSTG | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `KBU810`
- Footprint: `Diode_THT:Diode_Bridge_Vishay_KBU`
- 3D model: KBU (KiCad packages3D, STEP)
- 3D model files: `kbu810-etched.step` / `kbu810-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kbu810.step` / `kbu810.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MDD（Microdiode Electronics） datasheet](docs/kbu810-datasheet.pdf) (2 pp, sha256 `71c9e8b3a1c01d94`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kbu810-datasheet.pdf)