# KBU806

**MDD Microdiode Semiconductor** · Bridge Rectifiers · KBU

KBU806 from MDD Microdiode Semiconductor, in a KBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | power_out | Positive DC output of the bridge rectifier (pin 1, marked + on the package drawing). |
| 2 | AC1 | passive | AC input terminal (marked ~ on the drawing); the bridge is rated for 600 V repetitive peak reverse voltage (VRRM) on the KBU806. |
| 3 | AC2 | passive | AC input terminal (marked ~ on the drawing); the bridge is rated for 420 V RMS (VRMS) on the KBU806. |
| 4 | - | power_in | Negative DC output of the bridge rectifier (pin 4, marked − on the package drawing), the DC return. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MDD Microdiode Semiconductor |
| Package | KBU |
| Category | Diodes |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM |  |  | 600 | V |  | 1 |
| Maximum RMS voltage | VRMS |  |  | 420 | V |  | 1 |
| Maximum DC blocking voltage | VDC |  |  | 600 | V |  | 1 |
| Maximum average forward output rectified current | I(AV) |  |  | 8 | A | at TA=50 ℃ | 1 |
| Peak forward surge current | IFSM |  |  | 300 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 |
| Maximum instantaneous forward voltage drop per bridge element | VF |  |  | 1.1 | V | per bridge element at 8.0A | 1 |
| Maximum DC reverse current | IR |  |  | 10 | μA | TA=25°C at rated DC blocking voltage | 1 |
| Maximum DC reverse current | IR |  |  | 0.5 | mA | TA=125°C at rated DC blocking voltage | 1 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 1 |
| Storage temperature range | TSTG | -55 |  | 150 | °C |  | 1 |
| Typical Junction Capacitance | CJ |  | 200 |  | pF | Note 1 | 1 |
| Typical Thermal Resistance | RθJA |  | 2.7 |  | °C/W | Note 2 | 1 |

## CAD (KiCad official)

- Symbol: `KBU806`
- Footprint: `Diode_THT:Diode_Bridge_Vishay_KBU`
- 3D model: KBU (KiCad packages3D, STEP)
- 3D model files: `kbu806-etched.step` / `kbu806-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kbu806.step` / `kbu806.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MDD Microdiode Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588889664882794496) (2 pp, sha256 `71c9e8b3a1c01d94`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kbu806-datasheet.pdf)