# KBL606

**HXY MOSFET** · Bridge Rectifiers · KBL

KBL606 from HXY MOSFET, in a KBL. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | passive | Positive DC output of the bridge rectifier, the common cathode of the two upper diodes, shown as the leftmost terminal in the schematic symbol. |
| 2 | 2 | passive | First AC input of the bridge; maximum RMS input voltage for KBL606 is 420 V. |
| 3 | 3 | passive | Second AC input of the bridge; maximum RMS input voltage for KBL606 is 420 V. |
| 4 | - | passive | Negative DC output of the bridge rectifier, the common anode of the two lower diodes, shown as the rightmost terminal in the schematic symbol. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | KBL |
| Category | Diodes |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM |  |  | 600 | V |  | 1 |
| Maximum RMS bridge input voltage | VRMS |  |  | 420 | V |  | 1 |
| Maximum DC blocking voltage | VDC |  |  | 600 | V |  | 1 |
| Maximum average forward rectified output current | IF(AV) |  |  | 6 | A | TA=100 C | 1 |
| Peak forward surge current, single sine-wave superimposed on rated load | IFSM |  |  | 200 | A | JEDEC Method | 1 |
| Rating for fusing | I2t |  |  | 166 | A2sec | t<8.3ms | 1 |
| Typical thermal resistance per element | ReJA |  |  | 10 | °C / W | Junction to ambient on P.C. board mounting | 1 |
| Operating junction and storage temperature range | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum instantaneous forward voltage drop per leg | VF |  |  | 1.1 | V | per leg at 6.0A | 1 |
| Maximum DC reverse current at rated TA = 25 C | IR |  |  | 10 | A | DC blocking voltage per element, TA = 25 C | 1 |
| Maximum DC reverse current at rated TA = 125 C | IR |  |  | 1000 | A | DC blocking voltage per element, TA = 125 C | 1 |

## CAD (KiCad official)

- Symbol: `KBL606`
- Footprint: `Diode_THT:Diode_Bridge_Vishay_KBL`
- 3D model: KBL (KiCad packages3D, STEP)
- 3D model files: `kbl606-etched.step` / `kbl606-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kbl606.step` / `kbl606.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8608773596072730624) (4 pp, sha256 `3139bbd067ac013b`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kbl606-datasheet.pdf)